Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation

In this paper, we present a model for silicon dioxide breakdown characterization, valid for a thickness range between 25 /spl Aring/ and 130 /spl Aring/, which provides a method for predicting dielectric lifetime for reduced power supply voltages and aggressively scaled oxide thicknesses. This model, based on hole injection from the anode, accurately predicts Q/sub BD/ and t/sub BD/ behavior including a fluence in excess of 10/sup 7/ C/cm/sup 2/ at an oxide voltage of 2.4 V for a 25 /spl Aring/ oxide. Moreover, this model is a refinement of and fully complementary with the well known 1/E model, while offering the ability to predict oxide reliability for low voltages. >

[1]  Sameer Haddad,et al.  Differentiating impacts of hole trapping vs. interface states on TDDB reduction in thin oxide gated diode structures , 1993, 31st Annual Proceedings Reliability Physics 1993.

[2]  C. Hu,et al.  Hole injection oxide breakdown model for very low voltage lifetime extrapolation , 1993, 31st Annual Proceedings Reliability Physics 1993.

[3]  Elyse Rosenbaum,et al.  Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions , 1993 .

[4]  Chenming Hu,et al.  Impact of polysilicon depletion in thin oxide MOS technology , 1993, 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers.

[5]  Chenming Hu,et al.  Future CMOS scaling and reliability , 1993, Proc. IEEE.

[6]  Eduard A. Cartier,et al.  Degradation and breakdown of silicon dioxide films on silicon , 1992 .

[7]  C. Hu,et al.  Conductive channel in ONO formed by controlled dielectric breakdown , 1992, 1992 Symposium on VLSI Technology Digest of Technical Papers.

[8]  Chenming Hu,et al.  Ultra-thin silicon dioxide leakage current and scaling limit , 1992, 1992 Symposium on VLSI Technology Digest of Technical Papers.

[9]  C. Hu,et al.  Stress-induced current in thin silicon dioxide films , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[10]  C. Hu,et al.  Stress-induced oxide leakage , 1991, IEEE Electron Device Letters.

[11]  S.J. Wang,et al.  Effects of poly depletion on the estimate of thin dielectric lifetime , 1991, IEEE Electron Device Letters.

[12]  Chenming Calvin Hu,et al.  Implications of waveform and thickness dependence of SiO/sub 2/ breakdown on accelerated testing , 1991, 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers.

[13]  Elyse Rosenbaum,et al.  The effects of oxide stress waveform on MOSFET performance , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[14]  E. Rosenbaum,et al.  Effect of hot-carrier injection on n- and pMOSFET gate oxide integrity , 1991, IEEE Electron Device Letters.

[15]  B. Doyle,et al.  Impact of snapback-induced hole injection on gate oxide reliability of N-MOSFETs , 1990, IEEE Electron Device Letters.

[16]  Masakazu Shimaya,et al.  Neutral electron trap generation in SiO2 by hot holes , 1990 .

[17]  Performance degradation of n-channel MOS transistors during DC and pulsed Fowler-Nordheim stress , 1990, 28th Annual Proceedings on Reliability Physics Symposium.

[18]  J. Lien,et al.  Degradations due to hole trapping in flash memory cells , 1989, IEEE Electron Device Letters.

[19]  B. Riccò,et al.  High-field-induced degradation in ultra-thin SiO/sub 2/ films , 1988 .

[20]  Chen Ih-Chin,et al.  The effect of channel hot-carrier stressing on gate-oxide integrity in MOSFETs , 1988 .

[21]  Chenming Hu,et al.  Projecting the minimum acceptable oxide thickness for time-dependent dielectric breakdown , 1988, Technical Digest., International Electron Devices Meeting.

[22]  Jack C. Lee,et al.  Modeling and characterization of gate oxide reliability , 1988 .

[23]  D. Wolters,et al.  Electronic Charge Transport in Thin SiO2 Films , 1988 .

[24]  Chenming Hu,et al.  Ultra-thin silicon-dioxide breakdown characteristics of MOS devices with n+and p+polysilicon gates , 1987, IEEE Electron Device Letters.

[25]  D. Dimaria,et al.  Correlation of trap creation with electron heating in silicon dioxide , 1987 .

[26]  Tsuneo Ajioka,et al.  Electron trap center generation due to hole trapping in SiO2 under Fowler–Nordheim tunneling stress , 1987 .

[27]  Chenming Hu,et al.  Electron-trap generation by recombination of electrons and holes in SiO2 , 1987 .

[28]  S. Holland,et al.  Oxide breakdown dependence on thickness and hole current - enhanced reliability of ultra thin oxides , 1986, 1986 International Electron Devices Meeting.

[29]  Massimo V. Fischetti,et al.  SiO2‐induced substrate current and its relation to positive charge in field‐effect transistors , 1986 .

[30]  Robert W. Brodersen,et al.  Quantum yield of electron impact ionization in silicon , 1985 .

[31]  Chenming Hu,et al.  Electrical breakdown in thin gate and tunneling oxides , 1985, IEEE Transactions on Electron Devices.

[32]  B. Ricco,et al.  Novel Mechanism for Tunneling and Breakdown of Thin SiO 2 Films , 1983 .

[33]  Avinoam Kolodny,et al.  Two components of tunneling current in metal‐oxide‐semiconductor structures , 1983 .

[34]  S. Lai,et al.  Interface trap generation in silicon dioxide when electrons are captured by trapped holes , 1983 .

[35]  M. Liang,et al.  MOSFET Degradation due to stressing of thin oxide , 1984, 1982 International Electron Devices Meeting.

[36]  J. Maserjian,et al.  Observation of positively charged state generation near the Si/SiO2 interface during Fowler–Nordheim tunneling , 1982 .

[37]  E. Harari.  Dielectric breakdown in electrically stressed thin films of thermal SiO2 , 1978 .

[38]  W. C. Johnson,et al.  High‐field transport in SiO2 on silicon induced by corona charging of the unmetallized surface , 1976 .

[39]  C. R. Barrett,et al.  Failure modes and reliability of dynamic RAMS , 1976, 1976 International Electron Devices Meeting.

[40]  J. Maserjian,et al.  Oscillations in MOS tunneling , 1975 .

[41]  C. Svensson,et al.  Carrier trapping hysteresis in MOS transistors , 1970 .

[42]  M. Lenzlinger,et al.  Fowler‐Nordheim Tunneling into Thermally Grown SiO2 , 1969 .