Design and realization of high-power DFB lasers

The development of high-power GaAs-based ridge wave guide distributed feedback lasers is described. The lasers emit between 760 nm and 980 nm either in TM or TE polarization. Over a large current range, the lasers exhibit stable operation in a single transversal and longitudinal mode. A maximum continuous-wave output power of about 400 mW, a spectral linewidth below 1 MHz and a side mode suppression ratio greater than 50 dB have been demonstrated at room temperature. The distributed feedback is provided by first or second order gratings, formed in an InGaP/GaAsP/InGaP multilayer structure embedded into the p-AlGaAs cladding layer. Applications of such wavelength stabilized devices in non-linear frequency conversion, spectroscopy and for excitation of atomic transitions are discussed.

[1]  Hiroaki Kudo,et al.  Operation of 780 nm AlGaAs distributed feedback lasers at 100°C with low-loss waveguide structure , 1994 .

[2]  M. Weyers,et al.  High-power 783 nm distributed-feedback laser , 2004 .

[3]  Robert J. Lang,et al.  High-power singlemode AlGaAs distributed Bragg reflector laser diodes operating at 856 nm , 1994 .

[4]  J.H. Abeles,et al.  Single-mode distributed-feedback 761-nm GaAs-AlGaAs quantum-well laser , 1995, IEEE Photonics Technology Letters.

[5]  M. Weyers,et al.  High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm , 1999 .

[6]  G. G. Stokes "J." , 1890, The New Yale Book of Quotations.

[7]  Hans Wenzel,et al.  Green's function based simulation of the optical spectrum of multisection lasers , 2003 .

[9]  Frank Bugge,et al.  Monomode emission at 350 mW and high reliability with InGaAs/AlGaAs (/spl lambda/=1020 nm) ridge waveguide laser diodes , 1998 .

[10]  Wei-Ping Huang,et al.  Second- and higher-order resonant gratings with gain or loss-Part 1: Green's function analysis , 2000, IEEE Journal of Quantum Electronics.

[11]  M. Maiorov,et al.  High power single spatial and longitudinal mode 1310 nm InGaAsP/InP lasers with 450 mW CW output power for telecommunication applications , 2001, Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551).

[12]  Atsushi Okubo,et al.  High-Power Single Longitudinal Mode Operation of Distributed Feedback Laser Diodes with a Decoupled Confinement Heterostructure , 1999 .

[13]  G. Tränkle,et al.  2W reliable operation of /spl lambda/=735 nm GaAsP/AlGaAs laser diodes , 2001 .

[14]  Laurence S. Rothman,et al.  The HITRAN molecular spectroscopic database: edition of 2000 including updates through 2001 , 2003 .

[15]  H. Wenzel,et al.  Calculation of combined lateral and longitudinal spatial hole burning in lambda /4 shifted DFB lasers , 1993 .

[16]  G. Erbert,et al.  High-power ridge-waveguide distributed-feedback lasers emitting at 860 nm , 2002 .

[17]  R. M. Lammert,et al.  High-power InGaAs-GaAs-AlGaAs distributed feedback lasers with nonabsorbing mirrors , 1998 .

[18]  B. Sumpf,et al.  A distributed feedback diode laser and its application as Raman light source , 2003, 2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666).

[19]  Joe Hegarty,et al.  Oxygen sensing using single frequency GaAs-AlGaAs DFB laser diodes and VCSELs , 1996 .