Fabrication and characterization of InGaN p-i-n homojunction solar cell

In x Ga 1 -x N p-i-n homojunction solar cells with different In content are studied. The measured open circuit voltages ( V oc ) are 2.24, 1.34, and 0.96 V, for x = 0.02 , 0.12, and 0.15, respectively. By comparing the x-ray rocking curves, the I-V characteristics and the external quantum efficiencies, it’s demonstrated that the deterioration of InGaN crystal quality for larger In contents causes the decrease of V oc . The result demonstrates that reduction of defect is a key factor in the fabrication of nitride solar cell.

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