Programmable via Using Indirectly Heated Phase-Change Switch for Reconfigurable Logic Applications

A novel concept for a programmable via using an indirectly heated phase-change switch is proposed and fabricated successfully. In this device concept, circuits associated with the programmable via are decoupled from the configuration circuits by using an independently contacted heater electrode. We demonstrate the prototype device in a standard 180-nm CMOS copper back-end technology.

[1]  L. Geppert,et al.  Electrical fuse lets chips heal themselves , 2004, IEEE Spectrum.

[2]  S. Lai,et al.  Current status of the phase change memory and its future , 2003, IEEE International Electron Devices Meeting 2003.

[3]  L. Geppert A static RAM says goodbye to data errors [radiation induced soft errors] , 2004, IEEE Spectrum.

[4]  Pinaki Mazumder,et al.  A new built-in self-repair approach to VLSI memory yield enhancement by using neural-type circuits , 1993, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[5]  M. Breitwisch,et al.  Novel One-Mask Self-Heating Pillar Phase Change Memory , 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

[6]  S. Lai,et al.  OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[7]  S.K. Iyer,et al.  Electrically programmable fuse (eFUSE) using electromigration in silicides , 2002, IEEE Electron Device Letters.

[8]  M. Borgatti,et al.  A reconfigurable system featuring dynamically extensible embedded microprocessor, FPGA and customisable I/O , 2002, Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285).

[9]  Hiroki Koike,et al.  A 30-ns 64-Mb DRAM with built-in self-test and self-repair function , 1992 .

[10]  S.S. Iyer,et al.  Reliability Qualification of CoSi2 Electrical Fuse for 90Nm Technology , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

[11]  A. Pirovano,et al.  Electronic switching effect and phase-change transition in chalcogenide materials , 2004, IEEE Electron Device Letters.

[12]  Veena Misra,et al.  Thermal Stability of TaSi x N y Films Deposited by Reactive Sputtering on SiO2 , 2003 .

[13]  M. Breitwisch,et al.  Ultra-Thin Phase-Change Bridge Memory Device Using GeSb , 2006, 2006 International Electron Devices Meeting.

[14]  Michele Borgatti,et al.  A reconfigurable system featuring dynamically extensible embedded microprocessor, FPGA, and customizable I/O , 2003 .