Programmable via Using Indirectly Heated Phase-Change Switch for Reconfigurable Logic Applications
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S.J. Koester | C. Lam | R. Cheek | A.M. Young | K.N. Chen | L. Krusin-Elbaum | D.M. Newns | B.G. Elmegreen | N. Rana | C. Lam | R. Cheek | S. Koester | A. Young | D. Newns | B. Elmegreen | L. Krusin-Elbaum | K.N. Chen | N. Rana
[1] L. Geppert,et al. Electrical fuse lets chips heal themselves , 2004, IEEE Spectrum.
[2] S. Lai,et al. Current status of the phase change memory and its future , 2003, IEEE International Electron Devices Meeting 2003.
[3] L. Geppert. A static RAM says goodbye to data errors [radiation induced soft errors] , 2004, IEEE Spectrum.
[4] Pinaki Mazumder,et al. A new built-in self-repair approach to VLSI memory yield enhancement by using neural-type circuits , 1993, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..
[5] M. Breitwisch,et al. Novel One-Mask Self-Heating Pillar Phase Change Memory , 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
[6] S. Lai,et al. OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
[7] S.K. Iyer,et al. Electrically programmable fuse (eFUSE) using electromigration in silicides , 2002, IEEE Electron Device Letters.
[8] M. Borgatti,et al. A reconfigurable system featuring dynamically extensible embedded microprocessor, FPGA and customisable I/O , 2002, Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285).
[9] Hiroki Koike,et al. A 30-ns 64-Mb DRAM with built-in self-test and self-repair function , 1992 .
[10] S.S. Iyer,et al. Reliability Qualification of CoSi2 Electrical Fuse for 90Nm Technology , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.
[11] A. Pirovano,et al. Electronic switching effect and phase-change transition in chalcogenide materials , 2004, IEEE Electron Device Letters.
[12] Veena Misra,et al. Thermal Stability of TaSi x N y Films Deposited by Reactive Sputtering on SiO2 , 2003 .
[13] M. Breitwisch,et al. Ultra-Thin Phase-Change Bridge Memory Device Using GeSb , 2006, 2006 International Electron Devices Meeting.
[14] Michele Borgatti,et al. A reconfigurable system featuring dynamically extensible embedded microprocessor, FPGA, and customizable I/O , 2003 .