论文信息 - Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique - 字舞流文

Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique

G. Pensl | M. Krieger | S. Reshanov | I. Pintilie | B. Svensson | U. Grossner | L. Løvlie | S. Beljakowa | S. Kumar C.P.