Nanofabrication via direct transfer of BOE treated PDMS stamp patterns onto SiO2 surfaces

Various PDMS patterns with a few microns to sub-micron size and thickness of 20~30 nanometers were successfully transferred on the substrate via simple printing process of a buffered oxide etchant-treated PDMS stamp on the SiO2 substrate. The patterned PDMS layer acted as sacrificial layer for metal-film patterning and as chemical passivation layer for the selective adsorption of V2O5 nanowires. In particular, the electrical measurement of the patterned V2O5 nanowire network showed the semiconducting non-ohmic behavior in the channel.