Band-gap bowing in SixGe1−x alloy

Abstract The alloy SiGe exhibits smallest observed optical bowing. A theoretical analysis of this effect by use of self-consistent ab initio pseudopotential technique for ordered 50–50% alloy in the zinc-blende structure predicted correct optical bowing and revealed that both chemical and structural effects are important for this compound.

[1]  Pearsall,et al.  Structurally induced optical transitions in Ge-Si superlattices. , 1987, Physical review letters.

[2]  Chen,et al.  Binding energy and spectral width of Si 2p core excitons in SixGe1-x alloys. , 1985, Physical review letters.

[3]  John C. Bean,et al.  GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy , 1984 .

[4]  J. Dow,et al.  Theory of deep impurities in silicon-germanium alloys , 1984 .

[5]  H. Monkhorst,et al.  SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS , 1976 .

[6]  D. R. Hamann,et al.  Pseudopotentials that work: From H to Pu , 1982 .

[7]  J. Dufour,et al.  Energy band structure calculation of GexSn1−x and SixSn1−x alloys , 1995 .

[8]  P. Hohenberg,et al.  Inhomogeneous Electron Gas , 1964 .

[9]  B. Alder,et al.  THE GROUND STATE OF THE ELECTRON GAS BY A STOCHASTIC METHOD , 2010 .

[10]  W. Ching,et al.  Electronic structure of SixGe1−x semiconductor solid solutions , 1985 .

[11]  C. Kittel Introduction to solid state physics , 1954 .

[12]  Gell Effect of buffer-layer composition on new optical transitions in Si/Ge short-period superlattices. , 1988, Physical review. B, Condensed matter.

[13]  T. Soma The electronic theory of SiGe solid solutions , 1979 .

[14]  Martins,et al.  Stability of ordered bulk and epitaxial semiconductor alloys. , 1986, Physical review letters.

[15]  Alfonso Baldereschi,et al.  Band structure and instability of Ge1−xSnx alloys , 1989 .

[16]  R. Parmenter ENERGY LEVELS OF A DISORDERED ALLOY , 1955 .

[17]  Ma,et al.  Band structure and symmetry analysis of coherently grown Si1-xGex alloys on oriented substrates. , 1993, Physical review. B, Condensed matter.

[18]  Christensen,et al.  Relativistic band structure of Si, Ge, and GeSi: Inversion-asymmetry effects. , 1990, Physical review. B, Condensed matter.

[19]  Wood,et al.  Electronic structure of filled tetrahedral semiconductors. , 1985, Physical review. B, Condensed matter.

[20]  Martins,et al.  Atomic structure and ordering in semiconductor alloys. , 1985, Physical review. B, Condensed matter.

[21]  E. Holzschuh Convergence of momentum space, pseudopotential calculations for Si , 1983 .

[22]  Chen,et al.  Band structures of SixGe1-x alloys. , 1986, Physical review. B, Condensed matter.

[23]  A. Zunger,et al.  Self-interaction correction to density-functional approximations for many-electron systems , 1981 .

[24]  F. Bassani,et al.  Effect of Alloying and Pressure on the Band Structure of Germanium and Silicon , 1963 .

[25]  Weber,et al.  Near-band-gap photoluminescence of Si-Ge alloys. , 1989, Physical review. B, Condensed matter.

[26]  Chuan Yi Tang,et al.  A 2.|E|-Bit Distributed Algorithm for the Directed Euler Trail Problem , 1993, Inf. Process. Lett..