Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations
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[1] T. Mukai,et al. Effects of internal electrical field on transient absorption in InxGa1-xN thin layers and quantum wells with different thickness by pump and probe spectroscopy , 2003 .
[2] M. Asif Khan,et al. Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire , 2004 .
[3] Takashi Mukai,et al. Efficient radiative recombination from -oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique , 2004 .
[4] Takashi Mukai,et al. Efficient rainbow color luminescence from InxGa1−xN single quantum wells fabricated on {112¯2} microfacets , 2005 .
[5] Takayuki Sota,et al. First-principles study on electronic and elastic properties of BN, AlN, and GaN , 1998 .
[6] Fritz Henneberger,et al. Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wells , 2000 .
[7] Tanakorn Osotchan,et al. Electron mobilities in gallium, indium, and aluminum nitrides , 1994 .
[8] James S. Speck,et al. Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy , 2003 .
[9] S. Nakamura,et al. Brillouin scattering study of gallium nitride: elastic stiffness constants , 1997 .
[10] S. Nakamura,et al. Biaxial strain dependence of exciton resonance energies in wurtzite GaN , 1997 .
[11] Marc Ilegems,et al. Infrared Lattice Vibrations and Free-Electron Dispersion in GaN , 1973 .
[12] 小出 康夫,et al. The Blue Laser Diode , 1998 .
[13] M. Funato,et al. Hexagonal GaN grown on GaAs{11n} substrates by metalorganic vapor-phase epitaxy using AlAs intermediate layers , 2001 .
[14] D. Vanderbilt,et al. Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997, cond-mat/9705105.
[15] Vincenzo Fiorentini,et al. Spontaneous versus Piezoelectric Polarization in III–V Nitrides: Conceptual Aspects and Practical Consequences , 1999 .
[16] M. Reiche,et al. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes , 2000, Nature.
[17] Seoung-Hwan Park,et al. Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells , 2002 .
[18] Su-Huai Wei,et al. Valence band splittings and band offsets of AlN, GaN, and InN , 1996 .
[19] P. Lefebvre,et al. Nonlinear behavior of photoabsorption in hexagonal nitride quantum wells due to free carrier screening of the internal fields , 2003 .
[20] Yoshiki Saito,et al. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys , 2003 .
[21] Gerald B. Stringfellow,et al. Solid phase immiscibility in GaInN , 1996 .
[22] Takashi Mukai,et al. Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures , 2007 .
[23] Y.-C. Hsu,et al. Structure asymmetry effects in the optical gain of piezostrained InGaN quantum wells , 1999 .
[24] S. Nakamura,et al. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures , 1996 .
[25] Toshimasa Kobayashi,et al. Structure Analysis of InN Film Using Extended X-Ray Absorption Fine Structure Method , 2002 .
[26] A. Di Carlo,et al. Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures , 1999 .
[27] Wladek Walukiewicz,et al. Narrow bandgap group III-nitride alloys , 2003 .
[28] Shuji Nakamura,et al. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm , 1997 .
[29] J. Im,et al. The role of piezoelectric fields in GaN-based quantum wells , 1998 .
[30] S. Chuang,et al. Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment , 2000 .
[31] Shuji Nakamura,et al. Dimensionality of excitons in laser-diode structures composed of In x Ga 1-x N multiple quantum wells , 1999 .
[32] Shun Lien Chuang,et al. CRYSTAL-ORIENTATION EFFECTS ON THE PIEZOELECTRIC FIELD AND ELECTRONIC PROPERTIES OF STRAINED WURTZITE SEMICONDUCTORS , 1999 .
[33] Takashi Mukai,et al. Epitaxial growth and optical properties of semipolar (112¯2) GaN and InGaN∕GaN quantum wells on GaN bulk substrates , 2006 .
[34] Alan Francis Wright,et al. Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN , 1997 .
[35] Tow Chong Chong,et al. Electronic band structures and effective-mass parameters of wurtzite GaN and InN , 1998 .
[36] E. Park,et al. Many-body optical gain and intraband relaxation time of wurtzite InGaN∕GaN quantum-well lasers and comparison with experiment , 2005 .
[37] Takashi Mukai,et al. Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors , 2006 .
[38] T. Mukai,et al. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates , 2006 .
[39] Sugawara. Theory of spontaneous-emission lifetime of Wannier excitons in mesoscopic semiconductor quantum disks. , 1995, Physical review. B, Condensed matter.
[40] C. Gourdon,et al. Exciton Transfer between Localized States in CdS1–xSex Alloys , 1989 .
[41] Takashi Mukai,et al. Spatial and temporal luminescence dynamics in an InxGa1−xN single quantum well probed by near-field optical microscopy , 2002 .
[42] Isamu Akasaki,et al. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells , 2000 .
[43] S. Chu,et al. Structural and optical characterization of nonpolar GaN/AlN quantum wells , 2003 .