Epitaxial growth of a single-crystal hybridized boron nitride and graphene layer on a wide-band gap semiconductor.
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Chong-Yun Park | S. Yoo | D. Whang | D. Oh | Ji-Hoon Park | Cheol‐Woong Yang | Tae-Hoon Kim | Joung Real Ahn | Ha-Chul Shin | Jae Hyun Lee | Chong‐yun Park | Y. Moon | S. Ahn | Yamujin Jang | Jun-Hyong Lee | Jae Hyun Lee | J. Ahn | Jun-Hae Lee