SiC junction FETs - a state of the art review

The continuous progress made over the past years in terms of material quality and key technological issues have enabled silicon carbide (SiC) to mature as a material for high power semiconductor industry. These improvements combined with a better understanding of the physics of the devices have placed SiC devices in a position from where they can challenge the present day Silicon (Si) solutions in high power/high temperature applications. Amongst the multitude of SiC switches that have been demonstrated, the Junction Field Effect Transistor (JFET) is the most advanced on and, in fact, already available on the market. This paper reviews the present status of SiC junction-controlled devices and discusses the different approaches one may decide on when considering SiC JFETs for high power, high temperature applications

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