Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method

[1]  Ryutaro Maeda,et al.  Surface activated bonding of silicon wafers at room temperature , 1996 .

[2]  Peter Enoksson,et al.  A Coriolis mass flow sensor structure in silicon , 1996, Proceedings of Ninth International Workshop on Micro Electromechanical Systems.

[3]  H. Suzuki,et al.  Heat transmission effects of hetero-material (Al-PZT) direct bonding on an in-pipe micro inspection machine , 1996, Proceedings of Ninth International Workshop on Micro Electromechanical Systems.

[4]  B. Roberds,et al.  Chemical Free Room Temperature Wafer To Wafer Direct Bonding , 1995 .

[5]  Huang,et al.  Near-surface structure of low-energy-argon-bombarded Si(100). , 1994, Physical review. B, Condensed matter.

[6]  U. Gösele,et al.  Low temperature wafer direct bonding , 1994 .

[7]  B. Muller,et al.  Tensile strength characterization of low-temperature fusion-bonded silicon wafers , 1991 .

[8]  David V. Tsu,et al.  Auger electron spectroscopy studies of silicon nitride, oxide, and oxynitride thin films: Minimization of surface damage by argon and electron beams , 1987 .

[9]  C. Wong,et al.  A study of chemical bonding in suboxides of silicon using Auger electron spectroscopy , 1986 .

[10]  C. Kunz,et al.  Oxidation of Al single crystal surfaces by exposure to O2 and H2O , 1978 .

[11]  W. Miller,et al.  An investigation of RF sputter etched silicon surfaces using helium ion backscatter , 1975 .

[12]  S. Affrossman,et al.  X-ray photoelectron studies of the reaction of clean metals (Mg, Al, Cr, Mn) with oxygen and water vapour , 1975 .

[13]  T. Suga,et al.  TEM Observation of the Al and Cu Interfaces Bonded at Room Temperature by Means of the Surface Activation Method , 1990 .