论文信息 - Electrical characterization method to study barrier integrity in 3D through-silicon vias

Electrical characterization method to study barrier integrity in 3D through-silicon vias

In this paper, the controlled I-V (IVctrl) method is adopted for the barrier integrity characterization of TSVs at wafer level. Planar capacitor structures are used for the initial validation of the IVctrl method with respect to the traditional time dependent dielectric breakdown (TDDB) methodology. The TDDB field acceleration factor of the TSV liner is extracted by IVctrl in a reasonable time, and the results demonstrate that defective barriers can degrade TDDB field acceleration factor and thus TSV liner reliability.

[1] S. Burkett,et al. Process integration for through-silicon vias , 2005 .

[2] K. Holloway,et al. Tantalum as a diffusion barrier between copper and silicon , 1990 .

[3] Ennis T. Ogawa,et al. Reliability analysis method for low-k interconnect dielectrics breakdown in integrated circuits , 2005 .

[4] Dennis Saleh. Zs , 2001 .

[5] A. E. González. Colloidal aggregation with sedimentation: computer simulations. , 2001, Physical review letters.

[6] C. Yue,et al. Kinetics of copper drift in PECVD dielectrics , 1996, IEEE Electron Device Letters.

[7] R. N. Hall,et al. Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide , 1964 .

[8] Arnold Berman,et al. Time-Zero Dielectric Reliability Test by a Ramp Method , 1981, 19th International Reliability Physics Symposium.

[9] Christopher J. Wilson,et al. Interconnect reliability - A study of the effect of dimensional and porosity scaling , 2011 .

[10] Larry Zhao,et al. A new perspective of barrier material evaluation and process optimization , 2009, 2009 IEEE International Interconnect Technology Conference.

[11] Eicke R. Weber,et al. Intrinsic Diffusion Coefficient of Interstitial Copper in Silicon , 1998 .

[12] A. Jourdain,et al. 3D stacked IC demonstration using a through Silicon Via First approach , 2008, 2008 IEEE International Electron Devices Meeting.