Temperature dependence of threshold current for a quantum-well heterostructure laser

Abstract The threshold current density, J th , of a quantum-well laser diode is calculated taking into account the quasi-two-dimensional nature of the heterostructure. The calculated value of J th ( T ) for a quantum-well laser diode is found, in agreement with experiment, to be less temperature sensitive than that of a conventional double heterojunction laser. The step-like densities of states and the perturbed (hot) carrier distribution of a quasi-two-dimensional structure are responsible for the weaker temperature dependence. Supporting data on quantum-well Al x Ga 1- x AsGaAs heterostructure laser diodes grown by MO-CVD are presented showing that in the conventional expression J th ( T ) = J th (0) exp ( T / T 0 ), T 0 can be as high as ∼ 437°C.

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