All-optical magnetic resonance in semiconductors

A scheme is proposed wherein nuclear magnetic resonance (NMR) can be induced and monitored using only optical fields. In analogy to radio-frequency fields used in traditional NMR, circularly polarized light creates electron spins in semiconductors whose hyperfine coupling could tip nuclear moments. Time-resolved Faraday rotation experiments were performed in which the frequency of electron Larmor precession was used as a magnetometer of local magnetic fields experienced by electrons in n-type gallium arsenide. Electron spin excitation by a periodic optical pulse train appears not only to prepare a hyperpolarized nuclear moment but also to destroy it resonantly at magnetic fields proportional to the pulse frequency. This resonant behavior is in many ways supportive of a simple model of optically induced NMR, but a curious discrepancy between one of the observed frequencies and classic NMR values suggests that this phenomenon is more complex.

[1]  K. West,et al.  Electronic states in gallium arsenide quantum wells probed by optically pumped NMR. , 1995, Science.

[2]  D. Awschalom,et al.  Resonant Spin Amplification in n-Type GaAs , 1998 .

[3]  H. Carr,et al.  The Principles of Nuclear Magnetism , 1961 .

[4]  Flack,et al.  Terahertz Spin Precession and Coherent Transfer of Angular Momenta in Magnetic Quantum Wells. , 1996, Physical review letters.

[5]  A. Abragam,et al.  OVERHAUSER EFFECT IN NONMETALS , 1955 .

[6]  Nitin Samarth,et al.  Room-Temperature Spin Memory in Two-Dimensional Electron Gases , 1997 .

[7]  Ultraslow electron spin dynamics in GaAs quantum wells probed by optically pumped NMR , 1998, Science.

[8]  Dynamic nuclear polarization at the edge of a two-dimensional electron gas , 1997, cond-mat/9701039.

[9]  B. Sapoval,et al.  Low field electron-nuclear spin coupling in gallium arsenide under optical pumping conditions , 1977 .

[10]  G. Feher,et al.  Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance Technique , 1959 .

[11]  D. Paget,et al.  Optical detection of NMR in high-purity GaAs under optical pumping: Efficient spin-exchange averaging between electronic states , 1981 .

[12]  E. A. Gere,et al.  Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation Effects , 1959 .

[13]  K. Klitzing,et al.  New Resistance Maxima in the Fractional Quantum Hall Effect Regime , 1998 .

[14]  A. Gossard,et al.  Hysteresis and Spin Transitions in the Fractional Quantum Hall Effect , 1998 .

[15]  D. Awschalom,et al.  Electron Spin and Optical Coherence in Semiconductors , 1999 .

[16]  V. Safarov,et al.  Giant Overhauser shift of conduction-electron spin resonance due to optical polarization of nuclei in semiconductors , 1978 .

[17]  P. Wyder,et al.  High-field spin resonance of weakly bound electrons in GaAs , 1997 .

[18]  A. Overhauser Polarization of Nuclei in Metals , 1953 .

[19]  B. E. Kane A silicon-based nuclear spin quantum computer , 1998, Nature.