Reliability aspects of Hf-based capacitors: Breakdown and trapping effects

Dielectric breakdown and trapping effects are of serious concern for high-k dielectrics. In this paper acceleration models for dielectric breakdown and leakage current degradation in HfSiO films thicker 10 nm are introduced and the mechanism for leakage current increase during constant voltage stress is evaluated.

[1]  K.-H. Allers,et al.  Prediction of dielectric reliability from I-V characteristics: Poole-Frenkel conduction mechanism leading to sqrt(E) model for silicon nitride MIM capacitor , 2004, Microelectron. Reliab..

[2]  Stanford Sierra Camp,et al.  1997 IEEE International Integrated Reliability Workshop Final Report , 1993 .

[3]  E. Cartier,et al.  Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks , 2005, IEEE Transactions on Device and Materials Reliability.

[4]  Howard R. Huff,et al.  Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance , 2004 .

[5]  A. Stesmans,et al.  Conduction band-edge States associated with the removal of d-state degeneracies by the Jahn-Teller effect , 2005, IEEE Transactions on Device and Materials Reliability.

[6]  Donggun Park,et al.  Hf-silicate inter-poly dielectric technology for sub 70nm body tied FinFET flash memory , 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

[7]  Byoung Hun Lee,et al.  Interfacial layer dependence of HFSIXOy gate stacks on vT instability and charge trapping using ULTRA-short pulse I-V characterization , 2005 .

[8]  R.-P. Vollertsen,et al.  Voltage acceleration of oxide breakdown in the sub-10 nm Fowler-Nordheim and direct tunneling regime , 2005, 2005 IEEE International Integrated Reliability Workshop.

[9]  Influence of charge trapping on AC reliability of high-k dielectrics , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.