General Framework for Single Event Effects Rate Prediction in Microelectronics

A comprehensive mathematical framework is established that encompasses both Monte Carlo single event effects (SEE) rate prediction and analytical approximations based on a single rectangular parallelepiped (RPP). Criteria derived from consideration of multiple devices and technologies are presented that are useful in identifying situations where RPP-model predictions of SEE rates may not be appropriate and should be augmented or replaced by advanced physical modeling.

[1]  F. W. Sexton,et al.  Modeling the heavy ion cross-section for single event upset with track structure effects: the HIC-UP-TS model , 1996 .

[2]  Lloyd W. Massengill,et al.  Effects of process parameter distributions and ion strike locations on SEU cross-section data (CMOS SRAMs) , 1993 .

[3]  E. L. Petersen,et al.  Proton Upsets in Orbit , 1983, IEEE Transactions on Nuclear Science.

[4]  Lloyd W. Massengill,et al.  Physical mechanisms of single-event effects in advanced microelectronics , 2007 .

[5]  B.L. Bhuva,et al.  Charge Collection and Charge Sharing in a 130 nm CMOS Technology , 2006, IEEE Transactions on Nuclear Science.

[6]  K. Label,et al.  Radiation test challenges for scaled commercial memories , 2007, 2007 9th European Conference on Radiation and Its Effects on Components and Systems.

[7]  D. McMorrow,et al.  The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM , 2005, IEEE Transactions on Nuclear Science.

[8]  R.A. Reed,et al.  Application of RADSAFE to Model the Single Event Upset Response of a 0.25 $\mu$m CMOS SRAM , 2007, IEEE Transactions on Nuclear Science.

[9]  F. Sexton,et al.  Further development of the Heavy Ion Cross section for single event UPset: model (HICUP) , 1995 .

[10]  G. Espinel,et al.  Single Event Upset Mechanisms for Low-Energy-Deposition Events in SiGe HBTs , 2008, IEEE Transactions on Nuclear Science.

[11]  R. R. O'Brien,et al.  Dynamics of Charge Collection from Alpha-Particle Tracks in Integrated Circuits , 1981, 19th International Reliability Physics Symposium.

[12]  R.A. Reed,et al.  The effect of metallization Layers on single event susceptibility , 2005, IEEE Transactions on Nuclear Science.

[13]  E. Petersen Single-Event Data Analysis , 2008, IEEE Transactions on Nuclear Science.

[14]  Robert A. Reed,et al.  Implications of angle of incidence in SEU testing of modern circuits , 1994 .

[15]  peixiong zhao,et al.  Impact of Ion Energy and Species on Single Event Effects Analysis , 2007, IEEE Transactions on Nuclear Science.

[16]  F. W. Sexton,et al.  Modeling the heavy ion upset cross section , 1995 .

[17]  E. L. Petersen,et al.  Predicting Single Event Upsets in the Earth's Proton Belts , 1984, IEEE Transactions on Nuclear Science.

[18]  C. Carmichael,et al.  Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch , 2007, IEEE Transactions on Nuclear Science.

[19]  R. R. O'Brien,et al.  Collection of charge from alpha-particle tracks in silicon devices , 1983, IEEE Transactions on Electron Devices.

[20]  Lloyd W. Massengill,et al.  Evaluating average and atypical response in radiation effects simulations , 2003 .

[21]  G. Espinel,et al.  Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies , 2006, IEEE Transactions on Nuclear Science.

[22]  G. Vizkelethy,et al.  Charge Generation by Secondary Particles From Nuclear Reactions in BEOL Materials , 2009, IEEE Transactions on Nuclear Science.

[23]  R.A. Reed,et al.  Multi-Scale Simulation of Radiation Effects in Electronic Devices , 2008, IEEE Transactions on Nuclear Science.

[24]  A. Waczynski,et al.  Transient radiation effects in ultra-low noise HgCdTe IR detector arrays for space-based astronomy , 2005, IEEE Transactions on Nuclear Science.

[25]  M. Mendenhall,et al.  A screened Coulomb scattering module for displacement damage computations in Geant4 , 2004, IEEE Transactions on Nuclear Science.

[26]  R.A. Reed,et al.  Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry , 2008, IEEE Transactions on Nuclear Science.

[27]  peixiong zhao,et al.  Implications of Nuclear Reactions for Single Event Effects Test Methods and Analysis , 2006, IEEE Transactions on Nuclear Science.

[28]  L.W. Massengill,et al.  Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design , 2005, IEEE Transactions on Nuclear Science.

[29]  W. L. Bendel Length distribution of chords through a rectangular volume , 1984 .

[30]  A.F. Witulski,et al.  Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge Sharing , 2007, IEEE Transactions on Nuclear Science.

[31]  K. A. LaBel,et al.  Evidence for angular effects in proton-induced single-event upsets , 2002 .

[32]  G. Arfken Mathematical Methods for Physicists , 1967 .

[33]  B. Hughlock,et al.  Angular Dependence of Single Event Sensitivity in Hardened Flip/Flop Designs , 2008, IEEE Transactions on Nuclear Science.

[34]  H.S. Kim,et al.  Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs , 2008, IEEE Transactions on Nuclear Science.

[35]  Robert A. Reed,et al.  Effects of geometry on the proton SEU dependence on the angle of incidence , 1995 .

[36]  E. G. Stassinopoulos,et al.  A simple algorithm for predicting proton SEU rates in space compared to the rates measured on the CRRES satellite , 1994 .

[37]  J.W. Howard,et al.  Role of heavy-ion nuclear reactions in determining on-orbit single event error rates , 2005, IEEE Transactions on Nuclear Science.

[38]  peixiong zhao,et al.  Spatial and temporal characteristics of energy deposition by protons and alpha particles in silicon , 2004, IEEE Transactions on Nuclear Science.