Rare-earth oxide thin films for gate dielectrics in microelectronics
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[1] Bich-Yen Nguyen,et al. Structure and dielectric properties of amorphous LaAlO3 and LaAlOxNy films as alternative gate dielectric materials , 2003 .
[2] Lauri Niinistö,et al. Chemical vapour deposition of high-Tc superconducting thin films , 1993 .
[3] V. Loup,et al. Microstructure and electrical characterizations of yttrium oxide and yttrium silicate thin films deposited by pulsed liquid-injection plasma-enhanced metal-organic chemical vapor deposition , 2004 .
[4] H. Iwai,et al. Electrical Characteristics for Lu2O3 Thin Films Fabricated by E-Beam Deposition Method , 2004 .
[5] C. Dutta,et al. Space-charge limited conduction in praseodymium oxide films , 1981 .
[6] E. Cartier,et al. Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues , 2001 .
[7] Y. F. Loo,et al. Growth of Gadolinium Oxide This Films by Liquid Injection MOCVD Using a New Gadolinium Alkoxide Precursor , 2004 .
[8] H. Hwang,et al. Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3) , 2003 .
[9] H. B. Lu,et al. High quality, high-k gate dielectric: amorphous LaAlO3 thin films grown on Si(100) without Si interfacial layer , 2003 .
[10] C. Wenger,et al. Si Segregation into Pr2O3 and La2O3 high-k gate oxides , 2005 .
[11] A. Chin,et al. Fully silicided NiSi:Hf-LaAlO/sub 3//SG-GOI n-MOSFETs with high electron mobility , 2004, IEEE Electron Device Letters.
[12] Lauri Niinistö,et al. Formation and stability of lanthanum oxide thin films deposited from β-diketonate precursor , 2001 .
[13] Stefan De Gendt,et al. Observation and characterization of defects in HfO2 high-K gate dielectric layers , 2005, Microelectron. Reliab..
[14] J. Kwo,et al. Thin single-crystal Sc2O3 films epitaxially grown on Si (111)-structure and electrical properties , 2005 .
[15] J. Reif,et al. Praseodymium oxide growth on Si(100) by pulsed-laser deposition , 2002 .
[16] Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics , 2003 .
[17] H. Satake,et al. Tensile Strain in Si Due to Expansion of Lattice Spacings in CeO2 Epitaxially Grown on Si(111) , 2004 .
[18] M. Fanciulli,et al. Dielectric properties of high-kappa oxides: theory and experiment for Lu2O3. , 2005, Physical review letters.
[19] A. Chin,et al. High-Density RF MIM Capacitors Using High-k La2 O 3 Dielectrics , 2004 .
[20] S. Ikegawa,et al. Electrical Properties of Single Crystalline CeO2 High-k Gate Dielectrics Directly Grown on Si (111) , 2002 .
[21] Jürgen Schubert,et al. Ternary rare-earth metal oxide high-k layers on silicon oxide , 2005 .
[22] Peide D. Ye,et al. Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric , 2003 .
[23] T. Sajavaara,et al. Surface-Controlled Deposition of Sc2O3 Thin Films by Atomic Layer Epitaxy Using β-Diketonate and Organometallic Precursors , 2001 .
[24] J. Schaeffer,et al. Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition , 2005 .
[25] H. Osten,et al. Epitaxial growth of praseodymium oxide on silicon , 2001 .
[26] Jinyu Wu,et al. Photoemission study of high-k praseodymium silicates formed by annealing of ultrathin Pr2O3 on SiO2/Si , 2004 .
[27] M. Putkonen,et al. A comparative study on lanthanide oxide thin films grown by atomic layer deposition , 2005 .
[28] T. Sajavaara,et al. Low-temperature ALE deposition of Y2O3 thin films from β-diketonate precursors , 2001 .
[29] J. Gupta,et al. Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxide thickness , 2001 .
[30] J. Robertson. Band offsets of wide-band-gap oxides and implications for future electronic devices , 2000 .
[31] Properties of Lanthanum Aluminate Thin Film Deposited by MOCVD , 2003 .
[32] R. Gordon,et al. Atomic layer deposition of lanthanum aluminum oxide nano-laminates for electrical applications , 2004 .
[33] H. Iwai,et al. Characterization of La2 O 3 and Yb2 O 3 Thin Films for High-k Gate Insulator Application , 2003 .
[34] V. Fiorentini,et al. Theoretical evaluation of zirconia and hafnia as gate oxides for si microelectronics. , 2002, Physical review letters.
[35] David A. Muller,et al. Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si , 2001 .
[36] Udo Schwalke,et al. Process integration and nanometer-scale electrical characterization of crystalline high-k gate dielectrics , 2005, Microelectron. Reliab..
[37] M. Gasgnier. Rare earth metals, rare earth hydrides, and rare earth oxides as thin films a critical review , 1980 .
[38] J. Dabrowski,et al. Pseudopotential study of PrO2 and HfO2 in fluorite phase , 2001, Microelectron. Reliab..
[39] L. Niinistö,et al. Atomic layer epitaxy growth of LaGaO3 thin films , 2001 .
[40] Byung Jin Cho,et al. Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2 , 2004 .
[41] Jinfeng Zhu,et al. HfAlON films fabricated by pulsed laser ablation for high-k gate dielectric applications , 2005 .
[42] Lesley M. Smith,et al. Growth of Praseodymium Oxide and Praseodymium Silicate Thin Films by Liquid Injection MOCVD , 2004 .
[43] D. Schlom,et al. Thermodynamic stability of binary oxides in contact With silicon , 1996 .
[44] R. Wallace,et al. High-κ gate dielectrics: Current status and materials properties considerations , 2001 .
[45] M. Rodionov,et al. Electrical properties of metal-dysprosium oxide-gadolinium oxide-silicon structures , 2004 .
[46] E. Suzuki,et al. Electrical Properties of Ruthenium/Metalorganic Chemical Vapor Deposited La-Oxide/Si Field Effect Transistors , 2003 .
[47] S. Pearton,et al. Hydrogen-assisted pulsed-laser deposition of epitaxial CeO2 films on (001)InP , 2002 .
[48] D. Gilmer,et al. Evaluation of a Praseodymium Precursor for Atomic Layer Deposition of Oxide Dielectric Films , 2004 .
[49] Paul R. Chalker,et al. Some recent developments in the MOCVD and ALD of high-κ dielectric oxides , 2004 .
[50] C. Mueller,et al. Preparation of superconducting Y–Ba–Cu–O thin films , 1989 .
[51] V. Narayanan,et al. Interfacial oxide formation and oxygen diffusion in rare earth oxide–silicon epitaxial heterostructures , 2002 .
[52] Chenming Hu,et al. Direct tunneling leakage current and scalability of alternative gate dielectrics , 2002 .
[53] P. Singh,et al. Suitability of Rare-Earth Oxides for Use in Thin Film Transistors , 1987 .
[54] Lauri Niinistö,et al. Atomic layer deposition of rare earth oxides: erbium oxide thin films from β-diketonate and ozone precursors , 2004 .
[55] R. Gordon,et al. Atomic layer deposition of transition metals , 2003, Nature materials.
[56] F. Ren,et al. Novel insulators for gate dielectrics and surface passivation of GaN-based electronic devices , 2004 .
[57] M. Ritala,et al. Rare-earth oxide thin films as gate oxides in MOSFET transistors , 2003 .
[58] Zhi-guo Liu,et al. Growth and characteristics of La2O3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition , 2004 .
[59] T. Sajavaara,et al. Surface-controlled growth of LaAlO3 thin films by atomic layer epitaxy , 2001 .
[60] H. Seifert,et al. The Identity of Monoclinic La2O3 and Monoclinic Pr2O3 with La9.33(SiO4)6O2 and Pr9.33(SiO4)6O2, Respectively , 1995 .
[61] H. Ishiwara,et al. Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition , 2003 .
[62] Y. F. Loo,et al. Deposition of HfO2, Gd2O3 and PrOx by Liquid Injection ALD Techniques† , 2005 .
[63] J. P. Espinós,et al. Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology , 2004 .
[64] D. Muller,et al. Advances in high κ gate dielectrics for Si and III-V semiconductors , 2003 .
[65] R. Solanki,et al. Atomic Layer Deposition of Lanthanum Oxide Films for High-κ Gate Dielectrics , 2004 .
[66] G. Tallarida,et al. Atomic-layer deposition of Lu2O3 , 2004 .
[67] H. Iwai,et al. Composition, chemical structure, and electronic band structure of rare earth Oxide/Si(100) interfacial transition layer , 2004 .
[68] C.Y. Lin,et al. Fully silicided NiSi gate on La2O3 MOSFETs , 2003, IEEE Electron Device Letters.
[69] M. Putkonen,et al. Processing of Y2O3 Thin Films by Atomic Layer Deposition from Cyclopentadienyl-Type Compounds and Water as Precursors , 2004 .
[70] I. Fragalà,et al. A Simple Route to the Synthesis of Pr2O3 High‐k Thin Films , 2003 .
[71] D. Kwong,et al. ALD(HfO2)x(Al2O3)1-x high-k gate dielectrics for advanced MOS devices application , 2003 .
[72] Lesley M. Smith,et al. Growth of Lanthanum Silicate Thin Films by Liquid Injection MOCVD Using Tris[bis(trimethylsilyl)amido]lanthanum , 2003 .
[73] M. Putkonen,et al. Cerium dioxide buffer layers at low temperature by atomic layer deposition , 2002 .
[74] S. Locorotondo,et al. Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development , 2005, Microelectron. Reliab..
[75] H. Hwang,et al. Electrical and physical characteristics of PrTixOy for metal-oxide-semiconductor gate dielectric applications , 2002 .
[76] P. Singh,et al. ‘Mixed semiconductor’ thin film transistors , 1987 .
[77] Stergios Logothetidis,et al. Structure-dependent electronic properties of nanocrystalline cerium oxide films , 2003 .
[78] M. Gasgnier. Rare Earth Compounds (Oxides, Sulfides, Silicides, Boron, …︁) as Thin Films and Thin Crystals Physico‐Chemical Properties and Applications , 1989 .
[79] K. Kukli,et al. High Growth Rate of Erbium Oxide Thin Films in Atomic Layer Deposition from (CpMe)3Er and Water Precursors , 2005 .
[80] Pietro Delugas,et al. Dielectric properties of two phases of crystalline lutetium oxide , 2005, Microelectron. Reliab..
[81] S. Rhee,et al. Deposition of La2 O 3 Films by Direct Liquid Injection Metallorganic Chemical Vapor Deposition , 2002 .
[82] D. Choi,et al. Study on the precursors for La2O3 thin films deposited on silicon substrate , 2002 .
[83] M. Ramon,et al. Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments , 2004 .
[84] S. Stemmer,et al. Chemical, Physical, and Electrical Characterizations of Oxygen Plasma Assisted Chemical Vapor Deposited Yttrium Oxide on Silicon , 2003 .
[85] Hiroshi Iwai,et al. Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation , 2005, Microelectron. J..
[86] Gerald Lucovsky,et al. Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects , 2003, Microelectron. Reliab..
[87] A. A. Dakhel. Dielectric and optical properties of samarium oxide thin films , 2004 .
[88] M. Putkonen,et al. Neodymium oxide and neodymium aluminate thin films by atomic layer deposition , 2005 .
[89] Eduard A. Cartier,et al. Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility , 2001 .
[90] M. Rodionov,et al. Silicon passivated by two-layer insulating films of ytterbium oxide and dysprosium oxide , 2004 .
[91] C. Wenger,et al. First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics , 2004 .
[92] T. Kanashima,et al. Preparation and Characterization of High-k Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition , 2003 .
[93] G. Yuan,et al. Effect of magnetic metal cluster doping on dielectric property of LaAlO3 thin films prepared by pulsed laser deposition , 2004 .