Effect of wet-chemical substrate pretreatment on electronic interface properties and recombination losses of a -Si:H/c -Si and a -SiNx:H/c -Si hetero-interfaces
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L. Korte | M. Schmidt | M. Kunst | A. Laades | U. Stürzebecher | H. Angermann | E. Conrad | F. Wünsch | Frank Wünsch