CO SILICIDE FORMATION ON SIGEC/SI AND SIGE/SI LAYERS

The reaction of Co with epitaxial SiGeC/Si layers is investigated and compared to the reaction of Co with SiGe/Si layers. The sequence of phase formation is the same as the reaction of Co with monocrystalline Si, however, cobalt disilicide is formed at much higher temperatures. The presence of C further delays the disilicide formation, as a result of C accumulation at the silicide/substrate interface during the reaction, which blocks the Co diffusion paths. The CoSi2 layers thus formed exhibit a preferential (h00) orientation. The slow supply of Co atoms to the silicide/Si interface, due to the blocking of Co diffusion paths by Ge and C, is believed to be the reason for this epitaxial alignment.

[1]  Magnus Willander,et al.  CoSi2/Si1−xGex/Si(001) heterostructures formed through different reaction routes: Silicidation‐induced strain relaxation, defect formation, and interlayer diffusion , 1995 .

[2]  D. Sayers,et al.  Effect of composition on phase formation and morphology in Ti–Si_1−xGe_x solid phase reactions , 1995 .

[3]  J. Dekoster,et al.  Epitaxy of cosi2/si(100) - from co/ti/si(100) to reactive deposition epitaxy , 1995 .

[4]  Wen-Jie Qi,et al.  Solid state reaction of Co,Ti with epitaxially‐grown Si1−xGex film on Si(100) substrate , 1995 .

[5]  M. Nicolet,et al.  Epitaxial CoSi2 films on Si(100) by solid‐phase reaction , 1994 .

[6]  J. Crombeen,et al.  Epitaxial CoSi2 formation on (001)Si by reactive deposition , 1993 .

[7]  J. Sturm,et al.  Silicide/strained Si/sub 1-x/Ge/sub x/ Schottky-barrier infrared detectors , 1993, IEEE Electron Device Letters.

[8]  D. Sayers,et al.  Phase Formations in Co/Si, Co/Ge, and Co/Si1−xGex by Solid Phase Reactions , 1993 .

[9]  Edward S. Yang,et al.  Interfacial reactions and Schottky barriers of Pt and Pd on epitaxial Si1−xGex alloys , 1992 .

[10]  J. Baribeau,et al.  Co/SixGe1-x Alloy Formation on Strained SixGe1-x Layers , 1992 .

[11]  M. Eizenberg,et al.  Interaction of Pd with Strained Layers of Si1-xGex Epitaxially Grown on Si(100) , 1991 .

[12]  J. Sturm,et al.  Growth of Si1−xGex by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors , 1991 .

[13]  H. Kanaya,et al.  Preferential PtSi Formation in Thermal Reaction between Pt and Si0.8Ge0.2 MBE Layers , 1990 .