Inherently safe DC/DC converter using a normally-on SiC JFET

This paper examines the design of an inherently safe DC-DC converter specifically for normally on silicon-carbide based power JFETs. The converter is targeted for ambient temperatures of 225 /spl deg/C. A demonstration converter board has been completed and tested illustrating proof of principle of the self-biased gate driver configuration for deriving a stable 5-V dc output from a 25-V dc input. The converter has also demonstrated conventional "off-line" 120 VAC operation to develop a 12 V dc output.