论文信息 - A SIMULATION STUDY OF PARTIALLY DEPLETED SOI MOSFETS

A SIMULATION STUDY OF PARTIALLY DEPLETED SOI MOSFETS

We report on anomalous output characteristics observed in hydrody- namic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydro-dynamic transport model. It is not present in drift-diffusion simulations and its occurance in measurements is questionable. The problem is investigated under various condi- tions and an explanation of the cause of this effect is given.

[1] S. Selberherr,et al. Simulation of submicron double-heterojunction high electron mobility transistors with MINIMOS-NT , 1997 .

[2] Jerry G. Fossum,et al. A physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon , 1982 .

[3] B. Min,et al. SOI related simulation challenges with moment based BTE solvers , 2000, 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).

[4] J. Fossum,et al. Carrier recombination and lifetime in highly doped silicon , 1983 .

[5] J. Tihanyi,et al. Influence of the floating substrate potential on the characteristics of ESFI MOS transistors , 1975 .