Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode
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Marc Ilegems | Silvija Gradečak | J. Dorsaz | J.-F. Carlin | S. Gradečak | J. Carlin | M. Ilegems | J. Dorsaz
[1] Theodore D. Moustakas,et al. High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy , 2000 .
[2] Ratna Naik,et al. Optical and electrical properties of Al1−xInxN films grown by plasma source molecular-beam epitaxy , 2001 .
[3] A. Nurmikko,et al. Stress Engineering During Metalorganic Chemical Vapor Deposition of AlGaN/GaN Distributed Bragg Reflectors , 2001 .
[4] Takashi Mukai,et al. High-Power GaN P-N Junction Blue-Light-Emitting Diodes , 1991 .
[5] Pleun Maaskant,et al. Experimental characterisation of GaN-based resonant cavity light emitting diodes , 2002 .
[6] Oliver Ambacher,et al. Optical constants of epitaxial AlGaN films and their temperature dependence , 1997 .
[7] Joachim Piprek,et al. Band gap bowing and refractive index spectra of polycrystalline AlxIn1−xN films deposited by sputtering , 1997 .
[8] O. Brandt,et al. Crack-free and conductive Si-doped AlN∕GaN distributed Bragg reflectors grown on 6H-SiC(0001) , 2004 .
[9] H. Benisty,et al. Method of source terms for dipole emission modification in modes of arbitrary planar structures , 1998 .
[10] Satoshi Kamiyama,et al. Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy , 2003 .
[11] Takashi Matsuoka,et al. Calculation of unstable mixing region in wurtzite In1−x−yGaxAlyN , 1997 .
[12] H. Amano,et al. Structural Properties of Al 1- xIn xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy , 1998 .
[13] Pleun Maaskant,et al. Fabrication of GaN‐Based Resonant Cavity LEDs , 2002 .
[14] J. Carlin,et al. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN , 2003 .
[15] Oliver Ambacher,et al. Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection Spectroscopy , 1996 .
[16] Bernard Beaumont,et al. METALORGANIC VAPOR-PHASE EPITAXY-GROWN ALGAN MATERIALS FOR VISIBLE-BLIND ULTRAVIOLET PHOTODETECTOR APPLICATIONS , 1999 .
[17] Manijeh Razeghi,et al. Determination of the band-gap energy of Al 12x In x N grown by metal-organic chemical-vapor deposition , 1997 .
[18] S. Nakamura,et al. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes , 1996 .
[19] C. Weisbuch,et al. Impact of planar microcavity effects on light extraction-Part I: basic concepts and analytical trends , 1998 .
[20] H. Ogawa,et al. Crystal Structure and Orientation of AlxIn$_{{\bf 1}-\ninmb{x}}$N Epitaxial Layers Grown on (0001) \mbα-Al$_{\bf 2}$O$_{\bf 3}$ Substrates , 1995 .