论文信息 - On-wafer calibration techniques for giga-hertz CMOS measurements

On-wafer calibration techniques for giga-hertz CMOS measurements

This paper presents five different methods for performing on-wafer calibration of RF CMOS measurements. All methods are compatible with standard CMOS technology. A comparison of method performance up to 12 GHz is made with measurements on RF CMOS devices. The results verify that substrate and metallization losses must be considered to obtain high accuracy. Fixture design issues are discussed and a method for mitigating overestimation of DUT performance is suggested.

Troels Emil Kolding

[1] U. Lott,et al. Microwave frequency measurements and modeling of MOSFETs on low resistivity silicon substrates , 1996, Proceedings of International Conference on Microelectronic Test Structures.

[2] E. Morifuji,et al. Technology independent degradation of minimum noise figure due to pad parasitics , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

[3] H. Cho,et al. A three-step method for the de-embedding of high-frequency S-parameter measurements , 1991 .

[4] Bart Nauwelaers,et al. A new technique for in-fixture calibration using standards of constant length , 1998 .

[5] Torben Larsen,et al. CMOS technology adjusts to RF applications , 1998 .

[6] J. Raskin,et al. Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling , 1998 .