论文信息 - An 88 nm gate-length In

An 88 nm gate-length In

An 88 nm gate-length In0:53Ga0:47As/In0:52Al0:48As InP-based high electron mobility transistor (HEMT) was successfully fabricated with a gate width of 2 50 m and source–drain space of 2.4 m. The T-gate was defined by electron beam lithography in a trilayer of PMMA/Al/UVIII. The exposure dose and the development time were optimized, and followed by an appropriate residual resist removal process. These devices also demonstrated excellent DC and RF characteristics: the extrinsic maximum transconductance, the full channel current, the threshold voltage, the current gain cutoff frequency and the maximum oscillation frequency of the HEMTs were 765 mS/mm, 591 mA/mm, –0.5 V, 150 GHz and 201 GHz, respectively. The HEMTs are promising for use in millimeter-wave integrated circuits.

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