论文信息 - 〈0001〉-oriented growth of AlN films on Si(111) by microwave plasma CVD with AlBr3NH3N2 system - 字舞流文

〈0001〉-oriented growth of AlN films on Si(111) by microwave plasma CVD with AlBr3NH3N2 system

G. Meng | S. Xie | D. Peng | Xi Liu

[1] G. Meng,et al. The growth mechanism of 〈100〉 oriented AlN thin films by low-frequency plasma-enhanced metalorganic chemical vapour deposition process , 1993 .

[2] Isamu Akasaki,et al. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer , 1993 .

[3] T. Tansley,et al. LASER-INDUCED CHEMICAL VAPOR DEPOSITION OF ALN FILMS , 1990 .

[4] N. Lewis,et al. Preparation and Properties of Aluminum Nitride Films Using an Organometallic Precursor , 1989 .

[5] H. Windischmann. Intrinsic stress in A1N prepared by dual-ion-beam sputtering , 1987 .

[6] A. Bouteville,et al. Thermodynamics and Kinetics of Chemical Vapor Deposition of Aluminum Nitride Films , 1980 .