Ion beam synthesis of β-FeSi2 as an IR photosensitive material

The large sized and flat polycrystalline (beta) -FeSi2/n- Si heterojunction can be formed by a triple energy implantation method and the sample annealing at 800 degrees C. The polycrystalline (beta) -FeSi2 gains show good crystalline characteristics, a photoluminescence peak at 0.81 eV at 4.2 K and the optical direct band-gap of 0.84 eV. The (beta) -FeSi2/n-Si heterojunction shows good diode characteristics and high photovoltaic sensitivity for IR light. These results support that the ion beam synthesized (beta) -FeSi2/n-Si heterojunction is a promising IR sensitive materials.