Photonic BiCMOS technology — Enabler for Si-based, monolithically integrated transceivers towards 400 Gbps

We present a photonic BiCMOS process enabling for monolithically integrated Si-based transceiver front-ends towards single-wavelength 400 Gb/s data rate by combining segmented Mach-Zehnder-Interferometer modulators and high-speed germanium photo detectors with high-performance electronics.

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