Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC (0001)
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Satoru Tanaka | Y. Tamenori | T. Shirasawa | S. Tsuneyuki | K. Akagi | S. Mizuno | E. Kobayashi | T. Tokushima | Toshio Takahashi | Y. Ando | Y. Harada | Shik Shin | Y. Horikawa | H. Yoshida | T. Kinoshita | T. Muro | H. Tochihara | Kenjiro Hayashi