Low-power bandgap references featuring DTMOSTs

This paper describes two CMOS bandgap-reference circuits featuring Dynamic-Threshold MOS transistors. The first bandgap reference circuit aims at application in low-voltage low-power ICs that tolerate medium accuracy. The circuit's accuracy is 2% and it runs at supply voltages down to 0.85V while consuming only 1.2µW; the die area is 0.063mm2in a 0.35µm CMOS process. The second bandgap reference circuit aims at high accuracy operation (0.3%) without trimming. It consumes approximately 5.4µW from a 1.8V supply voltage, and occupies 0.06mm2in a 0.35µm CMOS process.

[1]  K. Kano.  Semiconductor Devices , 1997 .

[2]  K. E. Kuijk,et al.  A precision reference voltage source , 1973 .

[3]  J. Slotboom,et al.  Unified apparent bandgap narrowing in n- and p-type silicon , 1992 .

[4]  Chenming Hu,et al.  A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[5]  B.M.J. Kup,et al.  A DSP-based hearing instrument IC , 1997, IEEE J. Solid State Circuits.

[6]  R. Pierret.  Field effect devices , 1983 .

[7]  Hitoshi Shiga,et al.  A CMOS band-gap reference circuit with sub 1 V operation , 1998, 1998 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.98CH36215).

[8]  S.S. Wong,et al.  High-gain lateral p-n-p bipolar action in a p-MOSFET structure , 1992, IEEE Electron Device Letters.

[9]  S. Simon Wong,et al.  High-gain lateral bipolar action in a MOSFET structure , 1991 .

[10]  Willy Sansen,et al.  A CMOS temperature-compensated current reference , 1988 .

[11]  M.J.M. Pelgrom,et al.  Matching properties of MOS transistors , 1989 .

[12]  Eric A. Vittoz,et al.  Low-power design: ways to approach the limits , 1994, Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94.

[13]  R. J. Widlar,et al.  New developments in IC voltage regulators , 1970 .

[14]  A.H.M. van Roermund,et al.  The design of low-noise bandgap references , 1996 .