论文信息 - GaAs single-quantum well GRIN―SCH ridge lasers grown on InP by MOVPE

GaAs single-quantum well GRIN―SCH ridge lasers grown on InP by MOVPE

In this letter, lasing action of GaAs graded index separate confinement heterostructure single quantum well lasers grown by MOVPE on InP substrates is reported. Stripe lasers without facet coating show a room temperature thresholdcurrent down to 54 mA under pulsed condition. The differential quantum efficiency attains 20% per facet but preliminary aging measurements indicate a short lifetime.

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