Radial superlattices and single nanoreactors

We investigate the wall structure and thermal stability of individual freestanding rolled-up nanotubes (RUNTs) using micro-Raman spectroscopy, transmission electron microscopy, and selected area electron diffraction. Our studies reveal that the walls of the InAs/GaAs RUNTs consist of a radial superlattice comprising alternating crystalline and noncrystalline layers. Furthermore, we locally heated individual RUNTs with a laser beam, and Raman spectroscopy was used in situ to monitor any structural changes. At about 300 °C the heated part of a RUNT starts to oxidize and eventually transforms into crystalline β-Ga2O3. This result shows that RUNTs can serve as nanoreactors that locally synthesize material at intentional places on a substrate surface.

[1]  P. Puech,et al.  Strain effects on optical phonons in 〈111〉 GaAs layers analyzed by Raman scattering , 1997 .

[2]  K. Kakimoto,et al.  Raman spectra from Ga1−xInxAs epitaxial layers grown on GaAs and InP substrates , 1982 .

[3]  A. K. Gutakovsky,et al.  A technique for fabricating InGaAs/GaAs nanotubes of precisely controlled lengths , 2002 .

[4]  Andreas Dr. Plößl,et al.  GaAs wafer bonding by atomic hydrogen surface cleaning , 1999 .

[5]  Fred H. Pollak,et al.  Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors , 1972 .

[6]  O. Schmidt,et al.  Nanotechnology: Thin solid films roll up into nanotubes , 2001, Nature.

[7]  R. Zallen Optical studies of nanocrystalline GaAs: a review , 1992 .

[8]  Oliver G. Schmidt,et al.  Three-dimensional nano-objects evolving from a two-dimensional layer technology , 2001 .

[9]  M. A. Putyato,et al.  Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays , 2000 .

[10]  O. Schmidt,et al.  Free standing semiconductor micro- and nano-objects , 2002 .

[11]  Yoshio Bando,et al.  Synthesis, Raman scattering and defects of β-Ga2O3 nanorods , 2002 .

[12]  Oliver G. Schmidt,et al.  Self-assembled nanoholes, lateral quantum-dot molecules, and rolled-up nanotubes , 2002 .

[13]  Inspec Properties of gallium arsenide , 1986 .

[14]  P. M. Amirtharaj,et al.  Effects of As+ ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation , 1984 .

[15]  Inspec,et al.  Properties of lattice-matched and strained indium gallium arsenide , 1993 .

[16]  U. Gösele,et al.  Semiconductor wafer bonding , 1998 .

[17]  Oliver G. Schmidt,et al.  Diameter scalability of rolled-up In(Ga)As/GaAs nanotubes , 2002 .

[18]  O. Schmidt,et al.  Free-standing SiGe-based nanopipelines on Si (001) substrates , 2001 .

[19]  V. I. Mashanov,et al.  Fabrication of conducting GeSi/Si micro- and nanotubes and helical microcoils , 2001 .

[20]  O. Schmidt,et al.  Semiconductor tubes, rods and rings of nanometer and micrometer dimension , 2002 .

[21]  Sauér,et al.  Raman phonon piezospectroscopy in GaAs: Infrared measurements. , 1987, Physical review. B, Condensed matter.