Size dependence of the wavefunction of self-assembled InAs quantum dots from time-resolved optical measurements

The radiative and nonradiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements, we extract the oscillator strength and the quantum efficiency and their dependence on emission energy. From our results and a theoretical model, we determine the striking dependence of the overlap of the electron and hole wavefunctions on the quantum dot size. We conclude that the optical quality is best for large quantum dots, which is important in order to optimally tailor quantum dot emitters for, e.g., quantum electrodynamics experiments

[1]  Gilberto Medeiros-Ribeiro,et al.  Charged Excitons in Self-Assembled Semiconductor Quantum Dots , 1997 .

[2]  K. Drexhage.  Influence of a dielectric interface on fluorescence decay time , 1970 .

[3]  G. Rupper,et al.  Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity , 2004, Nature.

[4]  V. Kulakovskii,et al.  Strong coupling in a single quantum dot–semiconductor microcavity system , 2004, Nature.

[5]  Jean-Michel Gérard,et al.  Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots , 2001 .

[6]  J. Lakowicz.  Principles of fluorescence spectroscopy , 1983 .

[7]  Willem L. Vos,et al.  Controlling the dynamics of spontaneous emission from quantum dots by photonic crystals , 2004, Nature.

[8]  Harry A. Atwater,et al.  Photoluminescence quantum efficiency of dense silicon nanocrystal ensembles in SiO2 , 2006 .

[9]  Jean-Michel Gérard,et al.  Strong-coupling regime for quantum boxes in pillar microcavities: Theory , 1999 .

[10]  L Coolen,et al.  Measurement of the radiative and nonradiative decay rates of single CdSe nanocrystals through a controlled modification of their spontaneous emission. , 2004, Physical review letters.

[11]  J. J. Finley,et al.  Manipulation of the spontaneous emission dynamics of quantum dots in two-dimensional photonic crystals , 2005 .

[12]  Polman,et al.  Measuring and modifying the spontaneous emission rate of erbium near an interface. , 1995, Physical review letters.

[13]  Sidney Udenfriend,et al.  PRINCIPLES OF FLUORESCENCE , 1969 .

[14]  A Lemaître,et al.  Exciton-photon strong-coupling regime for a single quantum dot embedded in a microcavity. , 2004, Physical review letters.

[15]  R. Silbey,et al.  Fluorescence and energy transfer near interfaces: The complete and quantitative description of the Eu+3/mirror systems , 1975 .

[16]  E. O’Reilly,et al.  Optical Matrix Element in InAs/GaAs Quantum Dots: Dependence on Quantum Dot Parameters , 2005 .

[17]  M. S. Skolnick,et al.  Quantum-confined Stark shifts of charged exciton complexes in quantum dots , 2004 .

[18]  C. Couteau,et al.  Fast exciton spin relaxation in single quantum dots , 2005, cond-mat/0505210.

[19]  A. Zunger,et al.  Dependence of the electronic structure of self-assembled (In,Ga)As∕GaAs quantum dots on height and composition , 2005, cond-mat/0502409.

[20]  K. West,et al.  Femtosecond dynamics and absorbance of self-organized InAs quantum dots emitting near 1.3 μm at room temperature , 2000 .

[21]  Christophe Delerue,et al.  Nanostructures: Theory and Modelling , 2004 .

[22]  J. Bloch,et al.  Exciton radiative lifetime controlled by the lateral confinement energy in a single quantum dot , 2005 .

[23]  D. Englund,et al.  Controlling the spontaneous emission rate of single quantum dots in a two-dimensional photonic crystal. , 2005, Physical review letters.

[24]  A. Badolato,et al.  Optical properties of single InAs quantum dots in close proximity to surfaces , 2004 .