论文信息 - A GaAs-Cs-O transmission photocathode

A GaAs-Cs-O transmission photocathode

Polycrystalline GaAs layers have been deposited on sapphire substrates by the AsCl3-Ga-H2 vapour transport method, and treated with caesium and oxygen. A layer 0·6 μm thick when operated as a photocathode has shown a luminous sensitivity of 70 μA lm−1, in transmission. Thicker layers have shown lower sensitivities. Spectral response curves are given for layers 0·6 and 0·8 μm thick and show yields out to 1·4 ev. An attempt has been made to relate the results to an elementary theory for transmission photocathodes.

[1] C. Syms. Gallium Arsenide Thin-film Photocathodes , 1969 .

[2] J. J. Scheer,et al. GaAs-Cs: A new type of photoemitter , 1965 .

[3] B. Tuck. Photoluminescence of compensated p-type GaAs , 1967 .

[4] Carver A. Mead,et al. Metal-semiconductor surface barriers , 1966 .

[5] A A Turnbull,et al. Photoemission from GaAs-Cs-O , 1968 .

[6] G. Frank,et al. Efficient photoemission from GaAs epitaxial layers , 1969 .

[7] J. Moll,et al. EFFECTS OF HEAT CLEANING ON THE PHOTOEMISSION PROPERTIES OF GaAs SURFACES , 1969 .

[8] D. Effer. Epitaxial Growth of Doped and Pure GaAs in an Open Flow System , 1965 .

[9] J. Volger,et al. Note on the Hall Potential Across an Inhomogeneous Conductor , 1950 .

[10] J. J. Scheer,et al. Fermi level stabilization at cesiated semiconductor surfaces , 1967 .

[11] B. G. Cohen,et al. Avalanche Breakdown in Gallium Arsenide p-n Junctions , 1962 .