Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates
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Jens Birch | Lars Hultman | Ching-Lien Hsiao | Hans Högberg | Muhammad Junaid | L. Hultman | J. Birch | P. Persson | E. Serban | J. Palisaitis | C. Hsiao | M. Junaid | H. Högberg | Per Persson | Elena Alexandra Serban | Justinas Palisaitis | Lina Tengdelius | Lina Tengdelius
[1] G. Pozina,et al. Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods , 2017, Scientific Reports.
[2] H. Kuo,et al. Selective-area growth of single-crystal wurtzite GaN nanorods on SiOx/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing , 2017, Scientific Reports.
[3] Kelly P. Knutsen,et al. Single gallium nitride nanowire lasers , 2002, Nature materials.
[4] O. Brandt,et al. Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil , 2016, 1602.06204.
[5] Hiroshi Amano,et al. Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials , 2016 .
[6] Fan Yang,et al. Semiconductor Nanowire Light-Emitting Diodes Grown on Metal: A Direction Toward Large-Scale Fabrication of Nanowire Devices. , 2015, Small.
[7] Xianying Wang,et al. Effects of precursor-substrate distances on the growth of GaN nanowires , 2015 .
[8] C. Jagadish,et al. Effects of growth rate on InP nanowires morphology and crystal structure , 2013 .
[9] Yen‐Ting Chen,et al. Liquid-target reactive magnetron sputter epitaxy of High quality GaN(0001̄) nanorods on Si(111) , 2015 .
[10] Prashanth C. Upadhya,et al. The influence of defect states on non-equilibrium carrier dynamics in GaN nanowires , 2010 .
[11] L. Samuelson,et al. Mass transport model for semiconductor nanowire growth. , 2005, The journal of physical chemistry. B.
[12] Rong Liu,et al. Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates , 2009 .
[13] Atomic arrangement at the AlN/Si (111) interface , 2003 .
[14] Shizuo Fujita,et al. Wide-bandgap semiconductor materials: For their full bloom , 2014 .
[15] J. Yoon,et al. Growth Mechanism of Catalyst-Free and Mask-Free Heteroepitaxial GaN Submicrometer- and Micrometer-Sized Rods under Biaxial Strain: Variation of Surface Energy and Adatom Kinetics , 2012 .
[16] Gyu-Chul Yi,et al. Gallium nitride nanostructures for light-emitting diode applications , 2012 .
[17] G. Pozina,et al. Stacking fault related luminescence in GaN nanorods , 2015, Nanotechnology.
[18] E. Janzén,et al. Stoichiometric, epitaxial ZrB2 thin films with low oxygen-content deposited by magnetron sputtering from a compound target: Effects of deposition temperature and sputtering power , 2015 .
[19] Kazuyoshi Iida,et al. Violet and UV light‐emitting diodes grown on ZrB2 substrate , 2003 .
[20] K. A. Bertnessa,et al. Spontaneously grown GaN and AlGaN nanowires , 2006 .
[21] George T. Wang,et al. Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires , 2008 .
[22] J. Ristić,et al. On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy , 2008 .
[23] A. Waag,et al. Group III nitride core–shell nano‐ and microrods for optoelectronic applications , 2013 .
[24] E. Janzén,et al. Magnetron sputtering of epitaxial ZrB2 thin films on 4H‐SiC(0001) and Si(111) , 2014 .
[25] Wenliang Wang,et al. GaN-based light-emitting diodes on various substrates: a critical review , 2016, Reports on progress in physics. Physical Society.
[26] Chao Shen,et al. Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters. , 2016, Nano letters.
[27] Y. Mai,et al. Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires. , 2016, Nano letters.
[28] Deming Ma,et al. Growth and field emission of single-crystalline GaN nanowire with ropy morphology , 2015 .
[29] Tom Adams,et al. Native substrates for GaN: the plot thickens , 2006 .
[30] V. Nevolin,et al. SUBSTRATES FOR EPITAXY OF GALLIUM NITRIDE: NEW MATERIALS AND TECHNIQUES , 2008 .
[31] D. Wallis,et al. Prospects of III-nitride optoelectronics grown on Si , 2013, Reports on progress in physics. Physical Society.
[32] T. Jackson,et al. Titanium and titanium nitride contacts to n-type gallium nitride , 1998 .
[33] L. Hultman,et al. Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target , 2011 .
[34] Zetian Mi,et al. Phosphor-Free InGaN/GaN Dot-in-a-Wire White Light-Emitting Diodes on Copper Substrates , 2014, Journal of Electronic Materials.
[35] A. Rockett,et al. Growth and properties of single crystal TiN films deposited by reactive magnetron sputtering , 1985 .
[36] V. Ustinov,et al. Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment , 2005 .
[37] J. Piper. Galvanomagnetic effects in single-crystal ZrB2 , 1966 .