Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates

We demonstrate the versatility of magnetron sputter epitaxy by achieving high-quality GaN nanorods on different substrate/template combinations, specifically Si, SiC, TiN/Si, ZrB2/Si, ZrB2/SiC, Mo, ...

[1]  G. Pozina,et al.  Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods , 2017, Scientific Reports.

[2]  H. Kuo,et al.  Selective-area growth of single-crystal wurtzite GaN nanorods on SiOx/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing , 2017, Scientific Reports.

[3]  Kelly P. Knutsen,et al.  Single gallium nitride nanowire lasers , 2002, Nature materials.

[4]  O. Brandt,et al.  Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil , 2016, 1602.06204.

[5]  Hiroshi Amano,et al.  Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials , 2016 .

[6]  Fan Yang,et al.  Semiconductor Nanowire Light-Emitting Diodes Grown on Metal: A Direction Toward Large-Scale Fabrication of Nanowire Devices. , 2015, Small.

[7]  Xianying Wang,et al.  Effects of precursor-substrate distances on the growth of GaN nanowires , 2015 .

[8]  C. Jagadish,et al.  Effects of growth rate on InP nanowires morphology and crystal structure , 2013 .

[9]  Yen‐Ting Chen,et al.  Liquid-target reactive magnetron sputter epitaxy of High quality GaN(0001̄) nanorods on Si(111) , 2015 .

[10]  Prashanth C. Upadhya,et al.  The influence of defect states on non-equilibrium carrier dynamics in GaN nanowires , 2010 .

[11]  L. Samuelson,et al.  Mass transport model for semiconductor nanowire growth. , 2005, The journal of physical chemistry. B.

[12]  Rong Liu,et al.  Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates , 2009 .

[13]  Atomic arrangement at the AlN/Si (111) interface , 2003 .

[14]  Shizuo Fujita,et al.  Wide-bandgap semiconductor materials: For their full bloom , 2014 .

[15]  J. Yoon,et al.  Growth Mechanism of Catalyst-Free and Mask-Free Heteroepitaxial GaN Submicrometer- and Micrometer-Sized Rods under Biaxial Strain: Variation of Surface Energy and Adatom Kinetics , 2012 .

[16]  Gyu-Chul Yi,et al.  Gallium nitride nanostructures for light-emitting diode applications , 2012 .

[17]  G. Pozina,et al.  Stacking fault related luminescence in GaN nanorods , 2015, Nanotechnology.

[18]  E. Janzén,et al.  Stoichiometric, epitaxial ZrB2 thin films with low oxygen-content deposited by magnetron sputtering from a compound target: Effects of deposition temperature and sputtering power , 2015 .

[19]  Kazuyoshi Iida,et al.  Violet and UV light‐emitting diodes grown on ZrB2 substrate , 2003 .

[20]  K. A. Bertnessa,et al.  Spontaneously grown GaN and AlGaN nanowires , 2006 .

[21]  George T. Wang,et al.  Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires , 2008 .

[22]  J. Ristić,et al.  On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy , 2008 .

[23]  A. Waag,et al.  Group III nitride core–shell nano‐ and microrods for optoelectronic applications , 2013 .

[24]  E. Janzén,et al.  Magnetron sputtering of epitaxial ZrB2 thin films on 4H‐SiC(0001) and Si(111) , 2014 .

[25]  Wenliang Wang,et al.  GaN-based light-emitting diodes on various substrates: a critical review , 2016, Reports on progress in physics. Physical Society.

[26]  Chao Shen,et al.  Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters. , 2016, Nano letters.

[27]  Y. Mai,et al.  Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires. , 2016, Nano letters.

[28]  Deming Ma,et al.  Growth and field emission of single-crystalline GaN nanowire with ropy morphology , 2015 .

[29]  Tom Adams,et al.  Native substrates for GaN: the plot thickens , 2006 .

[30]  V. Nevolin,et al.  SUBSTRATES FOR EPITAXY OF GALLIUM NITRIDE: NEW MATERIALS AND TECHNIQUES , 2008 .

[31]  D. Wallis,et al.  Prospects of III-nitride optoelectronics grown on Si , 2013, Reports on progress in physics. Physical Society.

[32]  T. Jackson,et al.  Titanium and titanium nitride contacts to n-type gallium nitride , 1998 .

[33]  L. Hultman,et al.  Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target , 2011 .

[34]  Zetian Mi,et al.  Phosphor-Free InGaN/GaN Dot-in-a-Wire White Light-Emitting Diodes on Copper Substrates , 2014, Journal of Electronic Materials.

[35]  A. Rockett,et al.  Growth and properties of single crystal TiN films deposited by reactive magnetron sputtering , 1985 .

[36]  V. Ustinov,et al.  Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment , 2005 .

[37]  J. Piper Galvanomagnetic effects in single-crystal ZrB2 , 1966 .