论文信息 - Energy barriers in magnetic random access memory elements - 字舞流文

Energy barriers in magnetic random access memory elements

In this paper, energy barriers in magnetic random access memory elements were calculated. Three minimum energy paths for the thermal reversal of a thin NiFeCo MRAM element were found between the two stable states.

R. Dittrich | H. Forster | J. Fidler | D. Suess | W. Scholz | T. Schrefl

[1] Werner Scholz,et al. Time resolved micromagnetics using a preconditioned time integration method , 2002 .

[2] Werner Scholz,et al. A path method for finding energy barriers and minimum energy paths in complex micromagnetic systems , 2002 .

[3] A. Hindmarsh,et al. CVODE, a stiff/nonstiff ODE solver in C , 1996 .

[4] G. Henkelman,et al. A climbing image nudged elastic band method for finding saddle points and minimum energy paths , 2000 .

[5] S. Parkin,et al. Thickness-dependent magnetic properties of Ni81Fe19, Co90Fe10 and Ni65Fe15Co20 thin films , 2002 .

[6] Saied N. Tehrani,et al. Thermally activated magnetization reversal in submicron magnetic tunnel junctions for magnetoresistive random access memory , 2002 .