Reliability of passivated copper multichip module structures embedded in polyimide

Multichip module (MCM) structures were used to study the reliability of copper conductors embedded in polyimide. Conductor lines fully encased in titanium passivation, 50-100 nm thick, increased in resistance less than 0.4% after 1000 h of exposure to 85% humidity at 85 degrees C and 10-V bias. The fully encased lines also had corrosion rates six times lower than lines that had only 60% passivation coverage. Transmission lines passivated with 50 nm of titanium showed very little degradation in the rise time or amplitude of digital pulses that had a 0.5-GHz clock rate and 149-ps rise time. Copper/polyimide via chain structures were fabricated from vias having dimensions of 10-25 mu m. After 1000 cycles of thermal shock from -65 to 150 degrees C, via chains showed no significant resistance change. >

[1]  P. Ho,et al.  Interdiffusion at the polyimide-Cu interface , 1985 .

[2]  G. Rubloff,et al.  Chemical bonding and reaction at metal/polymer interfaces , 1985 .

[3]  N. Klymko,et al.  A study of the chemical and physical interaction between copper and polyimide , 1989 .

[4]  N. J. Chou,et al.  Interfacial reaction during metallization of cured polyimide: An XPS study , 1984 .

[5]  J. M. Cech,et al.  Pre-imidized photoimageable polyimide as a dielectric for high density multichip modules , 1992 .

[6]  Herbert H. Thompson,et al.  Advanced multichip module packaging and interconnect issues for GaAs signal processors operating abo , 1990 .

[7]  I. Turlik,et al.  Effects of polymer/metal interaction in thin-film multichip module applications , 1990, 40th Conference Proceedings on Electronic Components and Technology.

[8]  S. Chambers,et al.  Oxidation of Cu in contact with preimidized polyimide , 1990 .

[9]  Shyam P Murarka,et al.  Silicides for VLSI Applications , 1983 .

[10]  C. C. Chang,et al.  Multi-layer thin-film substrates for multi-chip packaging , 1989 .

[11]  J. K. Hagge,et al.  Ultra-reliable packaging for silicon-on-silicon WSI , 1988 .

[12]  Paul S. Ho,et al.  The microstructure of metal–polyimide interfaces , 1988 .

[13]  D. Shih,et al.  Cu passivation: A method of inhibiting copper‐polyamic acid interactions , 1991 .

[14]  F. Ohuchi,et al.  Summary Abstract: Ti as a diffusion barrier between Cu and polyimide , 1988 .

[15]  J. Yang The reliability performance evaluation of high-density thin-film multichip substrates , 1992, Proceedings 1992 IEEE Multi-Chip Module Conference MCMC-92.

[16]  N.L. Sbar,et al.  New acceleration factors for temperature, humidity, bias testing , 1979, IEEE Transactions on Electron Devices.

[17]  Evan G. Colgan,et al.  Oxidation and protection in copper and copper alloy thin films , 1991 .