论文信息 - ESD robustness of a BiCMOS SiGe technology

ESD robustness of a BiCMOS SiGe technology

High current characterization of epitaxial-base pseudomorphic silicon germanium heterojunction npn bipolar transistors (HBT) for evaluation of the electrostatic discharge (ESD) robustness is reported. BiCMOS active and passive elements are discussed.

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