论文信息 - Reversible metal-insulator transition in LaAlO 3 thin films mediated by intragap defects: An alternative mechanism for resistive switching - 字舞流文

Reversible metal-insulator transition in LaAlO 3 thin films mediated by intragap defects: An alternative mechanism for resistive switching

T. Venkatesan | Y. Feng | S. Dhar | Z. Liu | A. Barman | A. Annadi | W. Lu | K. Gopinadhan | Ariando | X. Wang | X. Yang | D. P. Leusink | Y. Lin | G. Xiong | Y. Zhao | H. Su | Y. Feng