Boron diffusion layer formation using Ge cryogenic implantation with low-temperature microwave annealing

It is shown that a low-sheet-resistance p-type diffusion layer with a small diffusion depth can be fabricated efficiently by cryogenic boron and germanium implantation combined with low-temperature (400 °C) microwave annealing. Compared with the conventional annealing at 1000 °C, a much smaller diffusion depth is obtained at the same sheet resistance. The low sheet resistance at 400 °C is due to microwave absorption in the surface amorphous layer, which is formed by cryogenic germanium implantation. However, the pn junction leakage was worse than that in conventional annealing, because crystal defects remain near the amorphous/crystal interface after microwave annealing. It is found that the pn junction leakage is improved greatly by cryogenic germanium implantation. These results show that a suitable combination of cryogenic implantation and microwave annealing is very promising for p-type diffusion layer technology.

[1]  M. Brodsky,et al.  Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide , 1969 .

[2]  J. R. Dennis,et al.  Crystalline to amorphous transformation in ion‐implanted silicon: a composite model , 1978 .

[3]  T. Tan,et al.  Ion-induced defects in semiconductors , 1981 .

[4]  Tsai,et al.  Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study. , 1985, Physical review. B, Condensed matter.

[5]  R. Tauber,et al.  Formation of amorphous layers by ion implantation , 1985 .

[6]  S. Solmi,et al.  Enhanced diffusion phenomena during rapid thermal annealing of preamorphized boron‐implanted silicon , 1986 .

[7]  J. Wortman,et al.  Electrical properties of shallow p+‐n junctions formed by BF2 ion implantation in germanium preamorphized silicon , 1988 .

[8]  E. Weber,et al.  A systematic analysis of defects in ion-implanted silicon , 1988 .

[9]  I. Dobson,et al.  Mechanisms for nonthermal effects on ionic mobility during microwave processing of crystalline solids , 1992 .

[10]  J. R. Liefting,et al.  Dislocation formation in silicon implanted at different temperatures , 1992 .

[11]  D. Kwong,et al.  Modeling of suppressed dopant activation in boron‐ and BF2‐implanted silicon , 1994 .

[12]  L. E. Cross,et al.  Measurement of microwave dielectric properties using the parallel‐plate dielectric resonance technique , 1994 .

[13]  P. Stolk,et al.  TRAP-LIMITED INTERSTITIAL DIFFUSION AND ENHANCED BORON CLUSTERING IN SILICON , 1995 .

[14]  Bum-Joo Lee,et al.  Microwave-induced low-temperature crystallization of amorphous silicon thin films , 1997 .

[15]  G. D. Watkins.  Native Defects and their Interactions with Impurities in Silicon , 1997 .

[16]  James Williams,et al.  Ion implantation of semiconductors , 1998 .

[17]  M. Brambilla,et al.  Crystal defects and junction properties in the evolution of device fabrication technology , 2002 .

[18]  S. Phillpot,et al.  Phonon wave-packet dynamics at semiconductor interfaces by molecular-dynamics simulation , 2002 .

[19]  M. Taniwaki,et al.  Formation of anomalous defect structure on GaSb surface by low temperature Sn ion-implantation , 2002 .

[20]  V. Voronkov,et al.  Intrinsic point defects and impurities in silicon crystal growth , 2002 .

[21]  Saibal Mukhopadhyay,et al.  Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits , 2003, Proc. IEEE.

[22]  G. Hobler,et al.  Status and open problems in modeling of as-implanted damage in silicon , 2003 .

[23]  G. Gilmer,et al.  Atomistic modeling of amorphization and recrystallization in silicon , 2003 .

[24]  Y. Gianchandani,et al.  RF and Microwave Rapid Magnetic Induction Heating of Silicon Wafers , 2006 .

[25]  B. Zhang,et al.  Polysilicon Thin Film-Transistors With Uniform and Reliable Performance Using Solution-Based Metal-Induced Crystallization , 2007, IEEE Transactions on Electron Devices.

[26]  B. Lojek.  Low temperature microwave annealing of S/D , 2008, 2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors.

[27]  N. D. Theodore,et al.  Dopant activation in ion implanted silicon by microwave annealing , 2009 .

[28]  Cheng-Ta Ko,et al.  Wafer-level bonding/stacking technology for 3D integration , 2010, Microelectron. Reliab..

[29]  J. Mazurier,et al.  Advances, challenges and opportunities in 3D CMOS sequential integration , 2011, 2011 International Electron Devices Meeting.

[30]  Yao-Jen Lee,et al.  Amorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave Annealing , 2011, IEEE Transactions on Electron Devices.

[31]  P. Clancy,et al.  Experimental determination of thermal profiles during laser spike annealing with quantitative comparison to 3-dimensional simulations , 2012 .

[32]  C. Hu,et al.  Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing , 2012 .

[33]  Thomas Ernst,et al.  3-D Sequential Integration: A Key Enabling Technology for Heterogeneous Co-Integration of New Function With CMOS , 2012, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.

[34]  Chih-Yuan Lu.  Future prospects of NAND flash memory technology--the evolution from floating gate to charge trapping to 3D stacking. , 2012, Journal of nanoscience and nanotechnology.

[35]  E. Olevsky,et al.  Microwave Sintering: Fundamentals and Modeling , 2013 .

[36]  Andrew R. Brown,et al.  Analytical Models for Three-Dimensional Ion Implantation Profiles in FinFETs , 2013, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[37]  K. Suguro,et al.  Improvement of P?N Junction Leakage and Reduction in Interface State Density in Transistors by Cryo Implantation Technology , 2013 .

[38]  Reduction of surface roughness and defect density by cryogenic implantation of arsenic , 2014 .

[39]  T. Yamashita,et al.  Investigation of implantation damage recovery using microwave system for defect-less p-n junction , 2014, 2014 International Workshop on Junction Technology (IWJT).

[40]  Benjamin Colombeau,et al.  Advanced CMOS devices: Challenges and implant solutions , 2014 .

[41]  N. Sugii.  Low-power-consumption fully depleted silicon-on-insulator technology , 2015 .

[42]  Mitsumasa Koyanagi,et al.  Recent progress in 3D integration technology , 2015, IEICE Electron. Express.