论文信息 - Gas electron multiplier produced with the plasma etching method

Gas electron multiplier produced with the plasma etching method

Abstract We have produced Gas Electron Multiplier (GEM) using the plasma etching method. The new GEM has holes with a cylindrical shape and can hold up to 520 V in nitrogen. Amplification factor was measured as a function of the applied voltage. A gain of 104 was obtained in argon-mixture gases. The gain characteristics are very similar to those of the GEMs made at CERN.

[1] A. Buzulutskov,et al. Advances in gas avalanche photomultipliers , 2000 .

[2] E. Costa,et al. An efficient photoelectric X-ray polarimeter for the study of black holes and neutron stars , 2001, Nature.

[3] B. Ketzer. Micropattern gaseous detectors in the COMPASS tracker , 2002 .

[4] W. K. Pitts,et al. Development and operation of laser machined microwell detectors , 1999 .

[5] A. Brahme,et al. Evaluation of a GEM and CAT-based detector for radiation therapy beam monitoring , 2000 .

[6] F. Sauli. GEM: A new concept for electron amplification in gas detectors , 1997 .

[7] Fabio Sauli,et al. Development and applications of gas electron multiplier detectors , 2003 .

[8] Fabio Sauli,et al. High rate X-ray imaging using multi-GEM detectors with a novel readout design , 2002 .

[9] Leszek Ropelewski,et al. EUROPEAN LABORATORY FOR PARTICLE PHYSICS CERN-EP/99-48 12.04.1999 CHARGE AMPLIFICATION AND TRANSFER PROCESSES IN THE GAS ELECTRON MULTIPLIER , 2001 .