论文信息 - Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers - 字舞流文

Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers

G. Chung | M. Dudley | B. Raghothamachar | Jianqiu Guo | Yu Yang | D. Hansen | I. Manning | E. Sanchez | J. Quast | O. Goue

[1] H. Matsunami. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices , 2004 .