Direct light pattern integration of low-temperature solution-processed all-oxide flexible electronics.

The rise of solution-processed electronics, together with their processing methods and materials, provides unique opportunities to achieve low-cost and low-temperature roll-to-roll printing of non-Si-based devices. Here, we demonstrate a wafer-scale direct light-patterned, fully transparent, all-solution-processed, and layer-by-layer-integrated electronic device. The deep ultraviolet irradiation of specially designed metal oxide gel films can generate fine-patterned shapes of ∼3 μm, which easily manifest their intrinsic properties at low-temperature annealing. This direct light patterning can be easily applied to the 4 in. wafer scale and diverse pattern shapes and provides feasibility for integrated circuit applications through the penetration of the deep ultraviolet range on the quartz mask. With this approach, we successfully fabricate all-oxide-based high-performance transparent thin-film transistors on flexible polymer substrates.

[1]  F. Ren,et al.  Al2O3/InGaZnO4 Heterojunction Band Offsets by X-Ray Photoelectron Spectroscopy , 2011 .

[2]  M. Halik,et al.  Fully Patterned Low‐Voltage Transparent Metal Oxide Transistors Deposited Solely by Chemical Spray Pyrolysis , 2013 .

[3]  Erode G. Mahadevan,et al.  Ammonium Nitrate Explosives for Civil Applications: Slurries, Emulsions and Ammonium Nitrate Fuel Oils , 2013 .

[4]  A. Facchetti,et al.  Role of Gallium Doping in Dramatically Lowering Amorphous‐Oxide Processing Temperatures for Solution‐Derived Indium Zinc Oxide Thin‐Film Transistors , 2010, Advances in Materials.

[5]  Hyun Jae Kim,et al.  Photoresist-Free Fully Self-Patterned Transparent Amorphous Oxide Thin-Film Transistors Obtained by Sol-Gel Process , 2014, Scientific Reports.

[6]  Young S. Choi,et al.  The OH production from the π–π* transition of acetylacetone , 1999 .

[7]  Dong Lim Kim,et al.  Simultaneous modification of pyrolysis and densification for low-temperature solution-processed flexible oxide thin-film transistors , 2012 .

[8]  You Seung Rim,et al.  Low-temperature metal-oxide thin-film transistors formed by directly photopatternable and combustible solution synthesis. , 2013, ACS applied materials & interfaces.

[9]  R. Poyato,et al.  Photo-sensitive sol–gel solutions for the low-temperature UV-assisted processing of PbTiO3 based ferroelectric thin films , 2003 .

[10]  Liang Huang,et al.  Photopolymerization and initiating mechanism of michael addition oligomers without photoinitiator , 2007 .

[11]  E. Fortunato,et al.  Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances , 2012 .

[12]  R. O’Hayre,et al.  Solution Processing of Transparent Conductors: From Flask to Film , 2012 .

[13]  M. Kanatzidis,et al.  Exploratory combustion synthesis: amorphous indium yttrium oxide for thin-film transistors. , 2012, Journal of the American Chemical Society.

[14]  M. Nakata,et al.  UV-Induced Photoisomerization of Acetylacetone and Identification of Less-Stable Isomers by Low-Temperature Matrix-Isolation Infrared Spectroscopy and Density Functional Theory Calculation , 2001 .

[15]  H. Ohta,et al.  Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.

[16]  Zhibin Yu,et al.  User-interactive electronic skin for instantaneous pressure visualization. , 2013, Nature materials.

[17]  T. Someya,et al.  Stretchable, Large‐area Organic Electronics , 2010, Advanced materials.

[18]  Yong-Young Noh,et al.  Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films , 2012, Nature.

[19]  M. Kanatzidis,et al.  Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing. , 2011, Nature materials.

[20]  A. Arias,et al.  Materials and applications for large area electronics: solution-based approaches. , 2010, Chemical reviews.

[21]  Chih-hung Chang,et al.  Low-temperature, high-performance, solution-processed indium oxide thin-film transistors. , 2011, Journal of the American Chemical Society.

[22]  Gun Hee Kim,et al.  Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor , 2009 .

[23]  Erode G. Mahadevan Ammonium Nitrate Explosives , 2013 .