10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C

This work demonstrates a lateral Ga2O3 Schottky barrier diode (SBD) with a breakdown voltage (BV) over 10 kV, the highest BV reported in Ga2O3 devices to date. The 10 kV SBD shows good thermal stability up to 200°C, which is among the highest operational temperatures reported in multi-kilovolt Ga2O3 devices. The key device design for achieving such high BV is a reduced surface field (RESURF) structure based on the p-type nickel oxide (NiO), which balances the depletion charges in the n-Ga2O3 channel at high voltage. At BV, the charge-balanced Ga2O3 SBD shows an average lateral electric field (E-field) over 4.7 MV/cm at 25 °C and over 3.5 MV/cm at 200°C, both of which exceed the critical E-field of GaN and SiC. The 10 kV SBD shows a specific on-resistance of $0.27~\Omega \cdot $ cm2 and a turn-on voltage of 1 V; at 200°C, the former doubles and the latter reduces to 0.7 V. These results suggest the good potential of Ga2O3 devices for medium- and high-voltage, high-temperature power applications.

[1]  Y. Wang,et al.  NiO junction termination extension for high-voltage (>3 kV) Ga2O3 devices , 2023, Applied Physics Letters.

[2]  A. Osinsky,et al.  NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV , 2023, Journal of Vacuum Science & Technology A.

[3]  F. Ren,et al.  7.5 kV, 6.2 GW cm−2 NiO/β-Ga2O3 vertical rectifiers with on–off ratio greater than 1013 , 2023, Journal of Vacuum Science & Technology A.

[4]  K. Sasaki,et al.  2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension , 2023, IEEE Electron Device Letters.

[5]  K. Sasaki,et al.  Uniformity improvement of thickness and net donor concentration in halide vapor phase epitaxial β-Ga2O3 wafers prepared on miscut angle substrates , 2023, Japanese Journal of Applied Physics.

[6]  K. Sasaki,et al.  Recent progress of Ga2O3 power technology: large-area devices, packaging and applications , 2023, Japanese Journal of Applied Physics.

[7]  E. Beam,et al.  First Demonstration of Vertical Superjunction Diode in GaN , 2022, International Electron Devices Meeting.

[8]  U. Singisetti,et al.  Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage , 2022, IEEE Electron Device Letters.

[9]  F. Udrea,et al.  Multidimensional device architectures for efficient power electronics , 2022, Nature Electronics.

[10]  Honggyun Kim,et al.  Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers , 2022, Applied Physics Letters.

[11]  M. Si,et al.  Ultra-wide bandgap semiconductor Ga2O3 power diodes , 2022, Nature Communications.

[12]  S. Krishnamoorthy,et al.  High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2 , 2022, IEEE Electron Device Letters.

[13]  Guangwei Xu,et al.  2.6 kV NiO/Ga2O3 Heterojunction Diode with Superior High-Temperature Voltage Blocking Capability , 2022, 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

[14]  T. You,et al.  Recessed-Gate Ga₂O₃-on-SiC MOSFETs Demonstrating a Stable Power Figure of Merit of 100 mW/cm² Up to 200 °C , 2022, IEEE Transactions on Electron Devices.

[15]  Xiao-hua Ma,et al.  Demonstration of β-Ga₂O₃ Superjunction-Equivalent MOSFETs , 2022, IEEE Transactions on Electron Devices.

[16]  A. Osinsky,et al.  4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm−2 , 2022, Applied Physics Express.

[17]  Hong Wang,et al.  Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT): A New GaN Power Switch up to 10 kV , 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

[18]  Y. Liu,et al.  First Demonstration of RESURF and Superjunction ß- Ga2O3 MOSFETs with p-NiO/n- Ga2O3 Junctions , 2021, International Electron Devices Meeting.

[19]  S. J. Pearton,et al.  Vertical β-Ga2O3 Schottky rectifiers with 750 V reverse breakdown voltage at 600 K , 2021, Journal of Physics D: Applied Physics.

[20]  C. Drowley,et al.  Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes , 2021, IEEE Transactions on Power Electronics.

[21]  F. Ren,et al.  A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode , 2020 .

[22]  U. Singisetti,et al.  Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage , 2020, IEEE Electron Device Letters.

[23]  Ming Xiao,et al.  High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K , 2019 .

[24]  Y. Hao,et al.  First Demonstration of Waferscale Heterogeneous Integration of Ga2O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process , 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

[25]  Y. Hao,et al.  Field-Plated Lateral $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2 , 2018, IEEE Electron Device Letters.

[26]  Akito Kuramata,et al.  1-kV vertical Ga2O3 field-plated Schottky barrier diodes , 2017 .

[27]  Burak Ozpineci,et al.  Review of Silicon Carbide Power Devices and Their Applications , 2017, IEEE Transactions on Industrial Electronics.

[28]  B. J. Baliga,et al.  A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension , 2011, IEEE Electron Device Letters.

[29]  Liang-Yu Chen,et al.  Stable Electrical Operation of 6H–SiC JFETs and ICs for Thousands of Hours at 500 $^{\circ}\hbox{C}$ , 2008, IEEE Electron Device Letters.