Modeling of SiC MOSFET with temperature dependent parameters and its applications

A model of Silicon carbide (SiC) MOSFET based on PSpice is proposed in this paper, which is suitable for a wide temperature range especially at low temperature. The static characteristics of SiC MOSFET are described by introducing temperature dependent voltage source and current source. The effect of negative turn-off gate drive voltage is also taken into account in the modeling. In order to reflect the low temperature characteristics of SiC MOSFET accurately, low temperature (-25°C) measurements are carried out, which provide the modeling basis. The determinations of key parameters in the model are analyzed in detail, including on-state resistor, internal gate resistor, temperature dependent sources, and some capacitors. The proposed model is verified by the experimental tests on a Buck converter prototype at different input voltages, input currents and temperatures. Simulation results on the proposed model coincide well with the experimental results, in terms of switching waveforms and power losses even at low temperature. The comparison between SiC MOSFET and Si MOSFET on switching characteristics and the efficiency comparison of Buck converter using SiC devices and Si devices are presented, which demonstrate the attractive advantage of SiC devices in power loss reduction.

[1]  H. A. Mantooth,et al.  Performance requirements for power MOSFET models , 1994 .

[2]  Angelo Raciti,et al.  A new PSpice power MOSFET model with temperature dependent parameters: evaluation of performances and comparison with available models , 1997, IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting.

[3]  Anant K. Agarwal,et al.  Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC , 2002 .

[4]  M. Ostling,et al.  SiC device technology for high voltage and RF power applications , 2002, 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595).

[5]  G. Verneau,et al.  Power MOSFET switching waveforms: an empirical model based on a physical analysis of charge locations , 2002, 2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings (Cat. No.02CH37289).

[6]  A. Agarwal,et al.  10-kV, 123-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC power DMOSFETs , 2004, IEEE Electron Device Letters.

[7]  A. Agarwal,et al.  10-kV, 123-mOcm2 4H-SiC power DMOSFETs , 2004 .

[8]  Leon M. Tolbert,et al.  Design , Modeling , and Characterization of Power MOSFET in 4 H-SiC for Extreme Environment Applications , 2005 .

[9]  M. Hasanuzzaman,et al.  Parameter Extraction and SPICE Model Development for 4H-Silicon Carbide (SiC) Power MOSFET , 2005, 2005 International Semiconductor Device Research Symposium.

[10]  A. Agarwal,et al.  10 kV, 5A 4H-SiC Power DMOSFET , 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

[11]  Brett Hull,et al.  Progress in Silicon Carbide Power Devices , 2006, 2006 64th Device Research Conference.

[12]  David W. Berning,et al.  Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices , 2007, APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition.

[13]  Jun Wang,et al.  Characterization, Modeling, and Application of 10-kV SiC MOSFET , 2008, IEEE Transactions on Electron Devices.

[14]  Sei-Hyung Ryu,et al.  Recent progress in SiC DMOSFETs and JBS diodes at Cree , 2008, 2008 34th Annual Conference of IEEE Industrial Electronics.

[15]  N. Goldsman,et al.  A Physical Model of High Temperature 4H-SiC MOSFETs , 2008, IEEE Transactions on Electron Devices.

[16]  Zheng Chen.  Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices , 2009 .