InGaAs/InP DHBTs With 120-nm Collector Having Simultaneously High , GHz

[1]  P. Asbeck,et al.  First demonstration of sub-0.25/spl mu/m-width emitter InP-DHBTs with > 400 GHz f/sub t/ and > 400 GHz f/sub max/ , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[2]  S. Lee,et al.  Ultra high frequency static dividers > 150 GHz in a narrow mesa InGaAs/InP DHBT technology , 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.

[3]  Mark J. W. Rodwell,et al.  SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs , 2001 .

[4]  J. Fastenau,et al.  InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub /spl tau// and 505-GHz f/sub max/ , 2005, IEEE Electron Device Letters.

[5]  Eiichi Sano,et al.  Prospects of InP-based IC technologies for 100-GBIT/S -class lightwave communications systems , 2001 .

[6]  J.F. Prairie,et al.  Self-aligned InP DHBT with f/sub /spl tau// and f/sub max/ over 300 GHz in a new manufacturable technology , 2004, IEEE Electron Device Letters.

[7]  T. Adam,et al.  SiGe HBT technology with f/sub max//f/sub T/=350/300 GHz and gate delay below 3.3 ps , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[8]  J. Zolper,et al.  Super-scaled InP HBTs for 150 GHz circuits , 2003, IEEE International Electron Devices Meeting 2003.

[9]  J. Fastenau,et al.  Wideband DHBTs using a graded carbon-doped InGaAs base , 2003, IEEE Electron Device Letters.

[10]  M. Urteaga,et al.  Deep submicron InP DHBT technology with electroplated emitter and base contacts , 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

[11]  Hao Gong,et al.  Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contacts , 2000 .

[12]  Inspec,et al.  Properties of lattice-matched and strained indium gallium arsenide , 1993 .