Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping
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Robert J. Lovelett | S. Harvey | M. Al‐Jassim | W. Metzger | D. Albin | C. Thompson | B. McCandless | H. Moutinho | W. Buchanan | J. Moseley | J. Duenow | E. Colegrove | Gowri Sriramagiri | S. Jensen
[1] M. Young,et al. Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe , 2018 .
[2] W. Metzger,et al. The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells , 2017 .
[3] I. Sankin,et al. Defect interactions and the role of complexes in the CdTe solar cell absorber , 2017 .
[4] Eric Colegrove,et al. Antimony Diffusion in CdTe , 2017, IEEE Journal of Photovoltaics.
[5] D. Kuciauskas,et al. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe , 2016 .
[6] S. Johnston,et al. Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl2 , 2016 .
[7] S. Harvey,et al. Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe , 2016 .
[8] W. Metzger,et al. First-principles study of roles of Cu and Cl in polycrystalline CdTe , 2016 .
[9] Hongbin Wu,et al. Organic solar cells: Going green , 2016, Nature Energy.
[10] S. Sivananthan,et al. In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy , 2015, Journal of Electronic Materials.
[11] S. Harvey,et al. Phosphorus doping of polycrystalline CdTe by diffusion , 2015, 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
[12] D. Kuciauskas,et al. Quantitative determination of grain boundary recombination velocity in CdTe by combination of cathodoluminescence measurements and numerical simulations , 2015, 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
[13] Douglas M. Bishop,et al. The impact of sodium on the sub-bandgap states in CZTSe and CZTS , 2015 .
[14] Sanjay Singh,et al. Enhanced power factor and reduced thermal conductivity of a half-Heusler derivative Ti9Ni7Sn8: A bulk nanocomposite thermoelectric material , 2015 .
[15] D. Levi,et al. Theoretical analysis of effects of deep level, back contact, and absorber thickness on capacitance–voltage profiling of CdTe thin-film solar cells , 2012 .
[16] Suhuai Wei,et al. Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe , 2011 .
[17] J. Sites,et al. Cadmium Telluride Solar Cells , 2011 .
[18] Manfred Martin,et al. Probing Diffusion Kinetics with Secondary Ion Mass Spectrometry , 2009 .
[19] R. Birkmire,et al. Design of a vapor transport deposition process for thin film materials , 2006 .
[20] D. Levi,et al. Time-resolved photoluminescence studies of CdTe solar cells , 2003 .
[21] W. Shafarman,et al. Chemical surface deposition of ultra-thin cadmium sulfide films for high performance and high cadmium utilization , 2003, 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of.
[22] Su-Huai Wei,et al. Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe , 2002 .
[23] L. Tjeng,et al. Charge fluctuations and image potential at oxide-metal interfaces , 2002 .
[24] M. Fiederle,et al. High temperature defect structure of Cd- and Te-rich CdTe , 2001, 2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310).
[25] S. Zhang,et al. Theoretical Study of Doping Limits of CdTe: Preprint , 2001 .
[26] Y. Marfaing. Impurity doping and compensation mechanisms in CdTe , 2001 .
[27] A. Zunger,et al. Calculated natural band offsets of all II–VI and III–V semiconductors: Chemical trends and the role of cation d orbitals , 1998 .
[28] R. Evrard,et al. Photoluminescence of CdTe doped with arsenic and antimony acceptors , 1995 .
[29] Meyer,et al. Identification of the cadmium vacancy in CdTe by electron paramagnetic resonance. , 1993, Physical review. B, Condensed matter.
[30] D. E. Cooper,et al. p‐type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular‐beam epitaxy , 1990 .
[31] C. W. Magee,et al. Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis , 1989 .
[32] J. G. Broerman,et al. Controlled p-type impurity doping of HgTe-CdTe superlattices during molecular-beam-epitaxial growth , 1989 .
[33] M. Aven,et al. Some Diffusion and Solubility Measurements of Cu in CdTe , 1968 .
[34] M. Lorenz,et al. Impurity Segregation in Binary Compounds , 1966 .
[35] H. Seltz,et al. A Thermodynamic Study of the Lead-Antimony System , 1939 .
[36] P. Schuck,et al. 3D Lifetime Tomography Reveals How CdCl2 Improves Recombination Throughout CdTe Solar Cells , 2017, Advanced materials.
[37] B. McCandless. CdTe Solar Cells: Processing Limits and Defect Chemistry Effects on Open Circuit Voltage , 2013 .
[38] H. Tatsuoka,et al. Luminescent Properties of Sb Doped CdTe Grown by Hot‐Wall Epitaxy , 2002 .
[39] Su-Huai Wei,et al. First‐Principles Study of Doping Limits of CdTe , 2002 .
[40] David Cahen,et al. Effects of Sodium on Polycrystalline Cu(In,Ga)Se2 and Its Solar Cell Performance , 1998 .
[41] Castner Tg,et al. Critical behavior of the electron-paramagnetic-resonance linewidth of a spin-1/2 two-dimensional antiferromagnet. , 1993 .
[42] V. Lazarev,et al. Sublimation thermodynamics of Cd3P2 , 1976 .
[43] M. Aven,et al. Physics and chemistry of II-VI compounds , 1967 .