Enhancing the security of memory in cloud infrastructure through in-phase change memory data randomisation
暂无分享,去创建一个
[1] Yan Solihin,et al. i-NVMM: A secure non-volatile main memory system with incremental encryption , 2011, 2011 38th Annual International Symposium on Computer Architecture (ISCA).
[2] D. Ielmini,et al. Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells , 2008, 2008 IEEE International Reliability Physics Symposium.
[3] A. Pirovano,et al. Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials , 2004, IEEE Transactions on Electron Devices.
[4] Jin Xiong,et al. Write-aware random page initialization for non-volatile memory systems , 2014, 2014 IEEE 32nd International Conference on Computer Design (ICCD).
[5] Lieven Eeckhout,et al. Sniper: Exploring the level of abstraction for scalable and accurate parallel multi-core simulation , 2011, 2011 International Conference for High Performance Computing, Networking, Storage and Analysis (SC).
[6] Yuangang Wang,et al. AIM: Fast and energy-efficient AES in-memory implementation for emerging non-volatile main memory , 2018, 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE).
[7] D. Ielmini,et al. Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation , 2007, 2007 IEEE International Electron Devices Meeting.
[8] Aamer Jaleel,et al. DRAMsim: a memory system simulator , 2005, CARN.
[9] Steven Swanson,et al. Near-Data Processing: Insights from a MICRO-46 Workshop , 2014, IEEE Micro.
[10] Ariel J. Feldman,et al. Lest we remember: cold-boot attacks on encryption keys , 2008, CACM.
[11] Onur Mutlu,et al. Ambit: In-Memory Accelerator for Bulk Bitwise Operations Using Commodity DRAM Technology , 2017, 2017 50th Annual IEEE/ACM International Symposium on Microarchitecture (MICRO).
[12] Sung-il Pae,et al. DRAM as source of randomness , 2009 .
[13] G. Edward Suh,et al. Extracting Device Fingerprints from Flash Memory by Exploiting Physical Variations , 2011, TRUST.
[14] Hyunjin Lee,et al. Flip-N-Write: A simple deterministic technique to improve PRAM write performance, energy and endurance , 2009, 2009 42nd Annual IEEE/ACM International Symposium on Microarchitecture (MICRO).
[15] Daniel E. Holcomb,et al. Power-Up SRAM State as an Identifying Fingerprint and Source of True Random Numbers , 2009, IEEE Transactions on Computers.
[16] Onur Mutlu,et al. Architecting phase change memory as a scalable dram alternative , 2009, ISCA '09.
[17] Christoforos E. Kozyrakis,et al. A case for intelligent RAM , 1997, IEEE Micro.
[18] Cong Xu,et al. NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile Memory , 2012, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.
[19] G. Edward Suh,et al. Physical Unclonable Functions for Device Authentication and Secret Key Generation , 2007, 2007 44th ACM/IEEE Design Automation Conference.
[20] C. Zambelli,et al. A New Analytical Model of the Erasing Operation in Phase-Change Memories , 2010, IEEE Electron Device Letters.
[21] A. Pirovano,et al. A Phase Change Memory Compact Model for Multilevel Applications , 2007, IEEE Electron Device Letters.
[22] Luis A. Lastras,et al. PreSET: Improving performance of phase change memories by exploiting asymmetry in write times , 2012, 2012 39th Annual International Symposium on Computer Architecture (ISCA).
[23] Hyojun Kim,et al. Evaluating Phase Change Memory for Enterprise Storage Systems: A Study of Caching and Tiering Approaches , 2014, TOS.
[24] Cong Xu,et al. Pinatubo: A processing-in-memory architecture for bulk bitwise operations in emerging non-volatile memories , 2016, 2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC).
[25] Ingrid Verbauwhede,et al. A soft decision helper data algorithm for SRAM PUFs , 2009, 2009 IEEE International Symposium on Information Theory.
[26] Zhisheng Huang,et al. The Impact of Resistance Drift of Phase Change Memory (PCM) Synaptic Devices on Artificial Neural Network Performance , 2019, IEEE Electron Device Letters.
[27] Karin Strauss,et al. Preventing PCM banks from seizing too much power , 2011, 2011 44th Annual IEEE/ACM International Symposium on Microarchitecture (MICRO).
[28] Yi He,et al. Reducing write activities on non-volatile memories in embedded CMPs via data migration and recomputation , 2010, Design Automation Conference.
[29] Hsien-Hsin S. Lee,et al. Security refresh: prevent malicious wear-out and increase durability for phase-change memory with dynamically randomized address mapping , 2010, ISCA.
[30] Jun Yang,et al. A durable and energy efficient main memory using phase change memory technology , 2009, ISCA '09.
[31] Tao Li,et al. Characterizing and mitigating the impact of process variations on phase change based memory systems , 2009, 2009 42nd Annual IEEE/ACM International Symposium on Microarchitecture (MICRO).
[32] Yuan Xie,et al. Energy-efficient multi-level cell phase-change memory system with data encoding , 2011, 2011 IEEE 29th International Conference on Computer Design (ICCD).
[33] Zili Shao,et al. Towards Write-Activity-Aware Page Table Management for Non-volatile Main Memories , 2015, TECS.
[34] Hye-Jin Kim,et al. A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput , 2007, 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.