论文信息 - Optical Characterization of Full SiC Wafer

Optical Characterization of Full SiC Wafer

Different optical characterization tool for mapping of SiC electrical properties (mobility, free carrier concentration, doping, minority carrier effective lifetime) are reviewed. For each technique, advantages and drawbacks are discussed and the domain of use is presented. An original approach to determine the minority carrier lifetime from room temperature PL intensity is more particularly developed.

[1] M. Mermoux,et al. Raman Imaging Analysis of SiC Wafers , 2003 .

[2] J. Bluet,et al. Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping , 2003 .

[3] Y. Hijikata,et al. Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy , 2002 .

[4] R. Helbig,et al. Mapping of the Luminescence Decay of Lightly-Doped n-4H-SiC at Room-Temperature , 2002 .

[5] A. Ellison,et al. Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy , 2002 .

[6] A. Winnacker,et al. Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements , 2002 .

[7] W. J. Choyke,et al. Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC , 2000 .

[8] Christer Hallin,et al. Evaluation of Auger Recombination Rate in 4H-SiC , 1997 .

[9] Hiroshi Harima,et al. Raman Investigation of SiC Polytypes , 1997 .

[10] A. Henry,et al. Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC , 1996 .

[11] W. Gerlach,et al. On the radiative recombination rate in silicon , 1972 .