Development of the Research on High-Power WLEDs
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Ming Fang Zhang | Qian Qian Hou | Pei Xin Zhang | Zheng Wu Lu | Xiang Zhong Ren | Peixin Zhang | X. Ren | Zhengwu Lu | Qianqian Hou | M. Zhang
[1] A. K. Tyagi,et al. Luminescence studies on lanthanide ions (Eu3+, Dy3+ and Tb3+) doped YAG:Ce nano-phosphors , 2009 .
[2] Guangdi Shen,et al. The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes , 2006 .
[3] G. Barreau,et al. Selective activation of failure mechanisms in packaged double-heterostructure light emitting diodes using controlled neutron energy irradiation , 2008, Microelectron. Reliab..
[4] Rao Tummala,et al. Integral passives for next generation of electronic packaging: application of epoxy/ceramic nanocomposites as integral capacitors , 2001 .
[5] P ? ? ? ? ? ? ? % ? ? ? ? , 1991 .
[6] Samuel Graham,et al. Thermal effects in packaging high power light emitting diode arrays , 2009 .
[7] A. Zukauskas,et al. Photoluminescence in sol–gel-derived YAG:Ce phosphors , 2007 .
[8] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.
[9] Htjm Bert Hintzen,et al. Long wavelength Eu2+ emission in Eu-doped Y–Si–Al–O–N glasses , 2003 .
[10] Drew Hanser,et al. Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth , 2007 .
[11] Zhihao Yuan,et al. The Origin of 505 nm-Peaked Photoluminescence from Ba3MgSi2O8:Eu2+, Mn2+ Phosphor for White-Light-Emitting Diodes , 2008 .
[12] Lung-Chien Chen,et al. GaN-based light-emitting diode with ZnO nanotexture layer prepared using hydrogen gas , 2008 .
[13] Chengchun Tang,et al. Synthesis and characterization of photoluminescent cerium-doped yttrium aluminum garnet , 2008 .
[14] Yong Wang,et al. High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates , 2007 .
[15] Studies of improving light extraction efficiency of high power blue light-emitting diode by photo-enhanced chemical etching , 2007 .
[16] D. Yuan,et al. Enhanced blue emission from Eu, Dy co-doped sol-gel Al , 2003 .
[17] Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method , 2007 .
[18] Laurent Bechou,et al. Measurement of the thermal characteristics of packaged double-heterostructure light emitting diodes for space applications using spontaneous optical spectrum properties , 2008 .
[19] Gaorong Han,et al. Eu/Dy ions co-doped white light luminescence zinc–aluminoborosilicate glasses for white LED , 2008 .
[20] Mark O. Liu,et al. Electroluminescent properties of color/luminance tunable organic light emitting diodes and their lifetime enhancement with encapsulation , 2008 .
[21] M. Rao,et al. White light emitting diode synthesis using near ultraviolet light excitation on Zinc oxide-Silicon dioxide nanocomposite , 2008 .
[22] Yi He,et al. Thermal characterization of an epoxy-based underfill material for flip chip packaging , 2000 .
[23] F. K. Yam,et al. Innovative advances in LED technology , 2005, Microelectron. J..
[24] Anna Cavallini,et al. Effects of internal fields on deep-level emission in InGaN/GaN quantum-well light-emitting diodes , 2009, Microelectron. J..