Measurement of bandgap energies in low-k organosilicates

In this work, experimental measurements of the electronic band gap of low-k organosilicate dielectrics will be presented and discussed. The measurement of bandgap energies of organosilicates will be made by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy. This energy serves as a reference point from which many other facets of the material can be understood, such as the location and presence of defect states in the bulk or at the interface. A comparison with other measurement techniques reported in the literature is presented.

[1]  Benjamin French,et al.  Detection of surface electronic defect states in low and high-k dielectrics using reflection electron energy loss spectroscopy , 2013 .

[2]  Benjamin French,et al.  Detection of defect states in low-k dielectrics using reflection electron energy loss spectroscopy , 2013 .

[3]  Stephan Hüfner,et al.  Photoelectron Spectroscopy: Principles and Applications , 2010 .

[4]  Yoshio Nishi,et al.  Charge Trapping within UV and Vacuum UV Irradiated Low-k Porous Organosilicate Dielectrics , 2010 .

[5]  S. Sze,et al.  Physics of Semiconductor Devices: Sze/Physics , 2006 .

[6]  Tracey Scherban,et al.  Compositional effects on electrical and mechanical properties in carbon-doped oxide dielectric films: Application of Fourier-transform infrared spectroscopy , 2004 .

[7]  A. Grill,et al.  Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization , 2003 .

[8]  P. Smet,et al.  Methods for the determination of the optical constants of thin films from single transmission measurements: a critical review , 2003 .

[9]  A. Grill.  Plasma enhanced chemical vapor deposited SiCOH dielectrics: from low-k to extreme low-k interconnect materials , 2003 .

[10]  Seiichi Miyazaki,et al.  Characterization of high-k gate dielectric/silicon interfaces , 2002 .

[11]  Alfred Grill,et al.  Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition , 2001 .

[12]  Stephan A. Cohen,et al.  Low Dielectric Constant Sicoh Films As Potential Candidates for Interconnect Dielectrics , 1999 .

[13]  A. Glachant,et al.  Energy gap-determination of a carbon contaminated thermal silicon oxide thin film using reflection electron energy loss spectroscopy , 1997 .

[14]  Richard D. Deslattes,et al.  Accurate measurement of Mg and Al Kα1,2 X-ray energy profiles , 1994 .

[15]  S. Tougaard,et al.  Comparison of validity and consistency of methods for quantitative XPS peak analysis , 1993 .

[16]  C. Klauber,et al.  Refinement of magnesium and aluminium Kα x‐ray source functions , 1993 .

[17]  Bell,et al.  Photoemission study of SiOx (0 <= x <= 2) alloys. , 1988, Physical review. B, Condensed matter.

[18]  Warren B. Jackson,et al.  Electronic structure of silicon nitride and amorphous silicon/silicon nitride band offsets by electron spectroscopy , 1987 .

[19]  Christian Mailhiot,et al.  Electronic structure of (001)- and (111)-growth-axis semiconductor superlattices , 1987 .

[20]  Bloomer,et al.  Optical dispersion relations for amorphous semiconductors and amorphous dielectrics. , 1986, Physical review. B, Condensed matter.

[21]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[22]  D. R. Penn.  Theory of the Electron Energy-Loss Spectrum in Core-Level X-Ray Photoemission from Solids , 1977 .

[23]  D. Eastman,et al.  The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements , 1971 .

[24]  D. Pines,et al.  Electron Interaction in Solids. Characteristic Energy Loss Spectrum , 1959 .

[25]  David Pines,et al.  COLLECTIVE ENERGY LOSSES IN SOLIDS , 1956 .